A platform for research: civil engineering, architecture and urbanism
Semipolar {112̅2} InGaN/GaN multiple quantum well optically pumped laser diodes selectively grown on Si (111) substrates
Semipolar {112̅2} InGaN/GaN multiple quantum well optically pumped laser diodes selectively grown on Si (111) substrates
Semipolar {112̅2} InGaN/GaN multiple quantum well optically pumped laser diodes selectively grown on Si (111) substrates
Han, Xiaobiao (author) / Liu, Yuebo (author) / Ren, Yuan (author) / Xing, Jieying (author) / Zhu, Tongtong (author) / Wu, Zhisheng (author) / Liu, Yang (author) / Zhang, Baijun (author)
Materials science in semiconductor processing ; 91 ; 327-332
2019-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets
British Library Online Contents | 2009
|CW InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off
British Library Online Contents | 2002
|Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
British Library Online Contents | 2009
|InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates
British Library Online Contents | 1999
|Structure and strain state of polar and semipolar InGaN quantum dots
British Library Online Contents | 2012
|