Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures: Fid-Bau Portal

Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures

Gkanatsiou, A. / Lioutas, Ch.B. / Frangis, N. / Polychroniadis, E.K. / Prystawko, P. / Leszczynski, M. / Altantzis, Th. / Van Tendeloo, G.

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Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures

Gkanatsiou, A. / Lioutas, Ch.B. / Frangis, N. / Polychroniadis, E.K. / Prystawko, P. / Leszczynski, M. / Altantzis, Th. / Van Tendeloo, G.

Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures

Gkanatsiou, A. / Lioutas, Ch.B. / Frangis, N. / Polychroniadis, E.K. / Prystawko, P. / Leszczynski, M. / Altantzis, Th. / Van Tendeloo, G.

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Title:

Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures

Contributors:

Gkanatsiou, A. (author) / Lioutas, Ch.B. (author) / Frangis, N. (author) / Polychroniadis, E.K. (author) / Prystawko, P. (author) / Leszczynski, M. (author) / Altantzis, Th. (author) / Van Tendeloo, G. (author)

Published in:

Materials science in semiconductor processing ; 91 ; 159-166

Publication date:

2019-01-01

Size:

8 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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