Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates: Fid-Bau Portal

Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates

Marçal, L.A.B. / Richard, M.-I. / Persichetti, L. / Favre-Nicolin, V. / Renevier, H. / Fanfoni, M. / Sgarlata, A. / Schülli, T.Ü. / Malachias, A.

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Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates

Marçal, L.A.B. / Richard, M.-I. / Persichetti, L. / Favre-Nicolin, V. / Renevier, H. / Fanfoni, M. / Sgarlata, A. / Schülli, T.Ü. / Malachias, A.

Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates

Marçal, L.A.B. / Richard, M.-I. / Persichetti, L. / Favre-Nicolin, V. / Renevier, H. / Fanfoni, M. / Sgarlata, A. / Schülli, T.Ü. / Malachias, A.

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Document information

Title:

Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates

Contributors:

Marçal, L.A.B. (author) / Richard, M.-I. (author) / Persichetti, L. (author) / Favre-Nicolin, V. (author) / Renevier, H. (author) / Fanfoni, M. (author) / Sgarlata, A. (author) / Schülli, T.Ü. (author) / Malachias, A. (author)

Published in:

Applied surface science ; 466 ; 801-807

Publication date:

2019-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.44

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