A platform for research: civil engineering, architecture and urbanism
First-principles calculations of vacancy-O-He and vacancy-N-He complexes in vanadium
First-principles calculations of vacancy-O-He and vacancy-N-He complexes in vanadium
First-principles calculations of vacancy-O-He and vacancy-N-He complexes in vanadium
Zhang, Pengbo (author) / Ding, Jianhua (author) / Sun, Dan (author) / Yang, Yaochun (author) / Huang, Shaosong (author) / Zhao, Jijun (author)
Computational materials science ; 160 ; 180-185
2019-01-01
6 pages
Article (Journal)
Unknown
DDC:
620.1
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
First-principles calculations of vacancy-O-He and vacancy-N-He complexes in vanadium
British Library Online Contents | 2019
|Effect of Ti/Y/O on He clustering at a vacancy in vanadium from first-principles calculations
DOAJ | 2023
|Helium–vacancy interactions in vanadium and tantalum
British Library Online Contents | 2018
|British Library Online Contents | 2002
|