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    Electronic properties of defects induced by hydrogen and helium radiation on Weyl semimetal niobium arsenic

    New search for: Zhang, Zhao-Jun
    New search for: Fu, Yan-Long
    New search for: Cheng, Wei
    New search for: Zhang, Feng-Shou

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    Electronic properties of defects induced by hydrogen and helium radiation on Weyl semimetal niobium arsenic

    New search for: Zhang, Zhao-Jun
    New search for: Fu, Yan-Long
    New search for: Cheng, Wei
    New search for: Zhang, Feng-Shou

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Electronic properties of defects induced by hydrogen and helium radiation on Weyl semimetal niobium arsenic

    New search for: Zhang, Zhao-Jun
    New search for: Fu, Yan-Long
    New search for: Cheng, Wei
    New search for: Zhang, Feng-Shou

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Electronic properties of defects induced by hydrogen and helium radiation on Weyl semimetal niobium arsenic

    Contributors:

    Zhang, Zhao-Jun (author) / Fu, Yan-Long (author) / Cheng, Wei (author) / Zhang, Feng-Shou (author)

    Published in:

    Computational materials science ; 160 ; 9-15

    Publication date:

    2019-01-01

    Size:

    7 pages

    ISSN:

    0927-0256

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.1

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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