Growth and characterization of co-evaporated Cu<emph>2</emph>ZnSnS<emph>4</emph> thin films: Fid-Bau Portal

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Growth and characterization of co-evaporated Cu2ZnSnS4 thin films

Chalapathi, U. / Uthanna, S. / Sundara Raja, V.

Thin films of Cu2ZnSnS4 (CZTS), a potential absorber layer for thin film heterojunction solar cells, have been successfully grown on soda-lime glass substrates held at 450 &convolu;C using co-evaporation technique. Cu, Sn, ZnS, and S, kept in molybdenum boats, are used as the source materials. The as-deposited films are annealed at 550 &convolu;C for an hour under sulphur atmosphere to improve the crystallinity and sulphur content. Films exhibited kesterite structure with (112) preferred orientation. The lattice parameters are found to be a = 0.544 nm and c = 1.098 nm. The crystallite size increased from 90 nm to 105 nm on annealing at 550 &convolu;C. Raman spectroscopy analysis of annealed films confirmed the CZTS phase formation with Cu2S as the secondary phase. The grain size is found to increase from 0.5 μm to 0.8 μm on annealing at 550 &convolu;C. The direct band gap of the annealed films is found to be 1.55 eV. The films are p-type in nature.

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Growth and characterization of co-evaporated Cu2ZnSnS4 thin films

Chalapathi, U. / Uthanna, S. / Sundara Raja, V.

Thin films of Cu2ZnSnS4 (CZTS), a potential absorber layer for thin film heterojunction solar cells, have been successfully grown on soda-lime glass substrates held at 450 &convolu;C using co-evaporation technique. Cu, Sn, ZnS, and S, kept in molybdenum boats, are used as the source materials. The as-deposited films are annealed at 550 &convolu;C for an hour under sulphur atmosphere to improve the crystallinity and sulphur content. Films exhibited kesterite structure with (112) preferred orientation. The lattice parameters are found to be a = 0.544 nm and c = 1.098 nm. The crystallite size increased from 90 nm to 105 nm on annealing at 550 &convolu;C. Raman spectroscopy analysis of annealed films confirmed the CZTS phase formation with Cu2S as the secondary phase. The grain size is found to increase from 0.5 μm to 0.8 μm on annealing at 550 &convolu;C. The direct band gap of the annealed films is found to be 1.55 eV. The films are p-type in nature.

Growth and characterization of co-evaporated Cu2ZnSnS4 thin films

Chalapathi, U. / Uthanna, S. / Sundara Raja, V.

Thin films of Cu2ZnSnS4 (CZTS), a potential absorber layer for thin film heterojunction solar cells, have been successfully grown on soda-lime glass substrates held at 450 &convolu;C using co-evaporation technique. Cu, Sn, ZnS, and S, kept in molybdenum boats, are used as the source materials. The as-deposited films are annealed at 550 &convolu;C for an hour under sulphur atmosphere to improve the crystallinity and sulphur content. Films exhibited kesterite structure with (112) preferred orientation. The lattice parameters are found to be a = 0.544 nm and c = 1.098 nm. The crystallite size increased from 90 nm to 105 nm on annealing at 550 &convolu;C. Raman spectroscopy analysis of annealed films confirmed the CZTS phase formation with Cu2S as the secondary phase. The grain size is found to increase from 0.5 μm to 0.8 μm on annealing at 550 &convolu;C. The direct band gap of the annealed films is found to be 1.55 eV. The films are p-type in nature.

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Title:

Growth and characterization of co-evaporated Cu2ZnSnS4 thin films

Contributors:

Chalapathi, U. (author) / Uthanna, S. (author) / Sundara Raja, V. (author)

Published in:

Journal of Renewable and Sustainable Energy ; 5 ; 031610-

Publication date:

2013-05-01

Size:

5 pages

ISSN:

DOI:

https://doi.org/10.1063/1.4808256

Type of media:

Article (Journal)

Type of material:

Electronic Resource

Language:

English

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