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Effects of gallium doping and thermal annealing on the physical properties of tin sulphide thin films
SnS thin films doped with gallium at different concentrations (0%, 4%, 6%, 8%, and 10%) were grown by the chemical bath deposition technique. The structural analysis confirmed previous results on the formation of a mixed face-centered cubic (rock-salt RS) and orthorhombic (OR) microcrystalline structure with the preferential orientations (111)RS and (200)RS in the undoped layers. This crystal structure was confirmed by Raman spectroscopy: the main vibration at 220 cm−1 corresponding to the face-centered cubic SnS was observed in all samples. Small amounts of Sn2S3 phases were also present. The optimum of thin film crystal structure was obtained with a gallium concentration of 4%. This layer was then annealed in nitrogen gas for 30 min at annealing temperatures ranging from 200 °C to 600 °C. X-ray diffraction analysis revealed a structural transition from RS to OR when the annealing temperature was over 500 °C. The optical bandgap energy declined with increasing annealing temperatures. The resistivity deduced from thermally stimulated current measurements indicated a drastic decrease from 1012 Ω cm to 102 Ω cm for, respectively, the as-prepared and annealed films at 600 °C, and was directly correlated with the structural transition. The elemental composition of Sn and S measured by energy dispersive spectroscopy remained near the stoichiometric ratio after annealing.
Effects of gallium doping and thermal annealing on the physical properties of tin sulphide thin films
SnS thin films doped with gallium at different concentrations (0%, 4%, 6%, 8%, and 10%) were grown by the chemical bath deposition technique. The structural analysis confirmed previous results on the formation of a mixed face-centered cubic (rock-salt RS) and orthorhombic (OR) microcrystalline structure with the preferential orientations (111)RS and (200)RS in the undoped layers. This crystal structure was confirmed by Raman spectroscopy: the main vibration at 220 cm−1 corresponding to the face-centered cubic SnS was observed in all samples. Small amounts of Sn2S3 phases were also present. The optimum of thin film crystal structure was obtained with a gallium concentration of 4%. This layer was then annealed in nitrogen gas for 30 min at annealing temperatures ranging from 200 °C to 600 °C. X-ray diffraction analysis revealed a structural transition from RS to OR when the annealing temperature was over 500 °C. The optical bandgap energy declined with increasing annealing temperatures. The resistivity deduced from thermally stimulated current measurements indicated a drastic decrease from 1012 Ω cm to 102 Ω cm for, respectively, the as-prepared and annealed films at 600 °C, and was directly correlated with the structural transition. The elemental composition of Sn and S measured by energy dispersive spectroscopy remained near the stoichiometric ratio after annealing.
Effects of gallium doping and thermal annealing on the physical properties of tin sulphide thin films
Reghima, Meriem (author) / Akkari, Anis (author) / Guasch, Cathy (author) / Turki-Kamoun, Najoua (author)
2015-03-01
13 pages
Article (Journal)
Electronic Resource
English
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