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Improved photoelectrochemical performance of Cu(In,Ga)Se2 thin films prepared by pulsed electrodeposition
Solar cells based on polycrystalline Cu(In,Ga)Se2 absorber layers have yielded the highest conversion efficiency among all the thin-film technologies. CIGS thin-films possess large optical absorption coefficient (≈105 cm−1) and a suitable bandgap of ≈ 1.20 eV for an ideal stoichiometry of CuIn0.7Ga0.3Se2. In the present study, Direct Current (DC) and Pulsed Current (PC) electrodeposition techniques are employed to obtain the near ideal stoichiometric CIGS thin-films on a Mo foil using a two electrode system at a constant potential. Deposited films are annealed at 550 °C under Ar atmosphere. Characterization of the annealed CIGS films is performed using SEM-energy dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy, and photoelectrochemistry to study the morphology, stoichiometry, phase constitution, and the photoelectrochemical response. PC deposition offered suitable manipulation of various parameters, which has helped in obtaining a better quality stoichiometric single phase chalcopyrite structured CIGS thin films with the elimination of unwanted secondary phases like Cu2−xSe. An improved photoelectrochemical performance, characteristic of a p-type semiconductor, is observed for the PC deposited CIGS films.
Improved photoelectrochemical performance of Cu(In,Ga)Se2 thin films prepared by pulsed electrodeposition
Solar cells based on polycrystalline Cu(In,Ga)Se2 absorber layers have yielded the highest conversion efficiency among all the thin-film technologies. CIGS thin-films possess large optical absorption coefficient (≈105 cm−1) and a suitable bandgap of ≈ 1.20 eV for an ideal stoichiometry of CuIn0.7Ga0.3Se2. In the present study, Direct Current (DC) and Pulsed Current (PC) electrodeposition techniques are employed to obtain the near ideal stoichiometric CIGS thin-films on a Mo foil using a two electrode system at a constant potential. Deposited films are annealed at 550 °C under Ar atmosphere. Characterization of the annealed CIGS films is performed using SEM-energy dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy, and photoelectrochemistry to study the morphology, stoichiometry, phase constitution, and the photoelectrochemical response. PC deposition offered suitable manipulation of various parameters, which has helped in obtaining a better quality stoichiometric single phase chalcopyrite structured CIGS thin films with the elimination of unwanted secondary phases like Cu2−xSe. An improved photoelectrochemical performance, characteristic of a p-type semiconductor, is observed for the PC deposited CIGS films.
Improved photoelectrochemical performance of Cu(In,Ga)Se2 thin films prepared by pulsed electrodeposition
Mandati, Sreekanth (author) / Sarada, Bulusu V. (author) / Dey, Suhash R. (author) / Joshi, Shrikant V. (author)
Journal of Renewable and Sustainable Energy ; 5 ; 031602-
2013-05-01
7 pages
Article (Journal)
Electronic Resource
English
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