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Experimental investigation of tunnel current in thin germanium p-n junctions

Belova, N.A. / Kovalev, A.N.

Effect of degree of alloying of germanium on tunnel diode characteristics; effect of dislocations in intrinsic germanium and effect of temperature on tunnel current in thin p-n junctions. (see also English translation in Radio Eng and Electronic Physics (pub by AIEE) v 6 n 1 Jan 1961 p 140-5)

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Experimental investigation of tunnel current in thin germanium p-n junctions

Belova, N.A. / Kovalev, A.N.

Effect of degree of alloying of germanium on tunnel diode characteristics; effect of dislocations in intrinsic germanium and effect of temperature on tunnel current in thin p-n junctions. (see also English translation in Radio Eng and Electronic Physics (pub by AIEE) v 6 n 1 Jan 1961 p 140-5)

Experimental investigation of tunnel current in thin germanium p-n junctions

Belova, N.A. / Kovalev, A.N.

Effect of degree of alloying of germanium on tunnel diode characteristics; effect of dislocations in intrinsic germanium and effect of temperature on tunnel current in thin p-n junctions. (see also English translation in Radio Eng and Electronic Physics (pub by AIEE) v 6 n 1 Jan 1961 p 140-5)

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Title:

Experimental investigation of tunnel current in thin germanium p-n junctions

Additional title:

Eksperimental'noe issledovanie tunnel'nogo toka v uzkikh germanievykh p-n perekhodakh

Contributors:

Belova, N.A. (author) / Kovalev, A.N. (author)

Published in:

Radiotekhnika i Elektronika ; 6

Publication date:

1961

Size:

6 pages

Type of media:

Article (Journal)

Type of material:

Print

Language:

Russian

Keywords:

Semiconductor devices

© Metadata Copyright Elsevier B. V. All rights reserved.

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