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Crystallization mechanisms of (In15Sb85)100−xBix phase change recording thin film
AbstractThe (In15Sb85)100−xBix films (x=0–18.3) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InBi composite target. The optical and thermal properties of the films were examined by reflectivity thermal analyzer. Microstructures of the films were analyzed by X-ray diffraction and transmission electron microscope. The crystallization activation energy of the (In15Sb85)100−xBix film (x=0–18.3) was decreased with increasing Bi content, this indicated that the crystallization speed was improved by doping Bi. The structure of as-deposited (In15Sb85)100−xBix films was amorphous and it would transform to Sb, InSb, Bi, and BiIn2 coexisting phases after annealing at 250°C for 30min.
Crystallization mechanisms of (In15Sb85)100−xBix phase change recording thin film
AbstractThe (In15Sb85)100−xBix films (x=0–18.3) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InBi composite target. The optical and thermal properties of the films were examined by reflectivity thermal analyzer. Microstructures of the films were analyzed by X-ray diffraction and transmission electron microscope. The crystallization activation energy of the (In15Sb85)100−xBix film (x=0–18.3) was decreased with increasing Bi content, this indicated that the crystallization speed was improved by doping Bi. The structure of as-deposited (In15Sb85)100−xBix films was amorphous and it would transform to Sb, InSb, Bi, and BiIn2 coexisting phases after annealing at 250°C for 30min.
Crystallization mechanisms of (In15Sb85)100−xBix phase change recording thin film
Ou, Sin-Liang (author) / Kuo, Po-Cheng (author) / Sheu, Shu-Chi (author) / Lin, Ger-Pin (author) / Tsai, Tsung-Lin (author) / Chen, Sheng-Chi (author) / Chiang, Don-Yau (author) / Tang, Wei-Tai (author)
2009-01-31
3 pages
Article (Journal)
Electronic Resource
English
Crystallization mechanisms of (In15Sb85)100-xBix phase change recording thin film
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