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Bismuth laminar-structure piezoelectric ceramic and preparation method thereof, method for enhancing high-temperature resistivity of bismuth laminar-structure piezoelectric ceramic
The invention relates to a bismuth laminar-structure piezoelectric ceramic and a preparation method thereof, a method for enhancing high-temperature resistivity of the bismuth laminar-structure piezoelectric ceramic. The bismuth laminar-structure piezoelectric ceramic comprises a main phase and high-insulation-resistance oxide powder granules as a second phase, wherein the main phase comprises Na0.5Bi2.5Nb2O9, Bi3TiNbO9, CaBi2Nb2O9 and/or Bi4Ti3O12; and the weight ratio of the second phase to the main phase is less than or equal to 10%, preferably 1-5%. According to the new method provided by the invention, oxides are doped at the grain boundary to form the second phase and regulate the microstructure, thereby effectively enhancing the high-temperature resistivity of the bismuth laminar-structure piezoelectric ceramic, synergically optimizing the dielectric property and piezoelectricity, and providing a new way for preparing the bismuth laminar-structure piezoelectric ceramic for high-temperature piezoelectric vibration sensors.
Bismuth laminar-structure piezoelectric ceramic and preparation method thereof, method for enhancing high-temperature resistivity of bismuth laminar-structure piezoelectric ceramic
The invention relates to a bismuth laminar-structure piezoelectric ceramic and a preparation method thereof, a method for enhancing high-temperature resistivity of the bismuth laminar-structure piezoelectric ceramic. The bismuth laminar-structure piezoelectric ceramic comprises a main phase and high-insulation-resistance oxide powder granules as a second phase, wherein the main phase comprises Na0.5Bi2.5Nb2O9, Bi3TiNbO9, CaBi2Nb2O9 and/or Bi4Ti3O12; and the weight ratio of the second phase to the main phase is less than or equal to 10%, preferably 1-5%. According to the new method provided by the invention, oxides are doped at the grain boundary to form the second phase and regulate the microstructure, thereby effectively enhancing the high-temperature resistivity of the bismuth laminar-structure piezoelectric ceramic, synergically optimizing the dielectric property and piezoelectricity, and providing a new way for preparing the bismuth laminar-structure piezoelectric ceramic for high-temperature piezoelectric vibration sensors.
Bismuth laminar-structure piezoelectric ceramic and preparation method thereof, method for enhancing high-temperature resistivity of bismuth laminar-structure piezoelectric ceramic
ZHOU ZHIYONG (author) / LI YUCHEN (author) / DONG XIANLIN (author)
2015-06-24
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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