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The invention provides a Na doping method of CIGS (copper, indium, gallium and selenium) and a manufacturing method of a Na-doped CIGS sputtering target material. The Na doping method of CIGS comprises the following steps of: preparing a sodium-containing solid solution of gallium; mixing the solid solution with copper, indium and selenium in a required proportion; and carrying out vacuum melting to obtain a Na-doped CIGS compound. The preparation method of the Na-doped CIGS sputtering target material comprises the following steps of: smashing the prepared Na-doped CIGS compound; carrying out hot-pressing treatment after drying treatment; cooling the smashed Na-doped CIGS compound to the room temperature after carrying out hot-pressing; and finally processing the smashed Na-doped CIGS compound into a required shape by a grinding machine so as to obtain the Na-doped CIGS sputtering target material. The method provided by the invention can be used for preparing the CIGS compound which is uniformly doped with Na. High-quality Na-doped CIGS sputtering target material can be prepared by utilizing the compound. Moreover, in the preparation process, the loss of various elements can be further avoided, so that the conversation efficiency of a solar battery is improved in a facilitated mode.
The invention provides a Na doping method of CIGS (copper, indium, gallium and selenium) and a manufacturing method of a Na-doped CIGS sputtering target material. The Na doping method of CIGS comprises the following steps of: preparing a sodium-containing solid solution of gallium; mixing the solid solution with copper, indium and selenium in a required proportion; and carrying out vacuum melting to obtain a Na-doped CIGS compound. The preparation method of the Na-doped CIGS sputtering target material comprises the following steps of: smashing the prepared Na-doped CIGS compound; carrying out hot-pressing treatment after drying treatment; cooling the smashed Na-doped CIGS compound to the room temperature after carrying out hot-pressing; and finally processing the smashed Na-doped CIGS compound into a required shape by a grinding machine so as to obtain the Na-doped CIGS sputtering target material. The method provided by the invention can be used for preparing the CIGS compound which is uniformly doped with Na. High-quality Na-doped CIGS sputtering target material can be prepared by utilizing the compound. Moreover, in the preparation process, the loss of various elements can be further avoided, so that the conversation efficiency of a solar battery is improved in a facilitated mode.
Na doping method of CIGS (copper, indium, gallium and selenium) and manufacturing method of Na-doped CIGS sputtering target material
2015-09-23
Patent
Electronic Resource
English
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