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Preparation method for titanium and yttrium co-doped zirconia normal-temperature semiconductor ceramic material
The invention discloses a preparation method for a titanium and yttrium co-doped zirconia normal-temperature semiconductor ceramic material. The preparation method comprises the following steps: carrying out a powder mixing treatment on ZrO2 powder, Y2O3 powder and Ti powder, and then taking out and drying to obtain mixed powder; carrying out granulation and sample compaction on the mixed powder to obtain a shaped sample; dumping and sintering the shaped sample; placing the shaped sample subjected to the dumping and sintering in a vacuum furnace and carrying out high-temperature sintering, and cooling with the furnace to obtain the titanium and yttrium co-doped zirconia normal-temperature semiconductor ceramic material. According to the preparation method for the titanium and yttrium co-doped zirconia normal-temperature semiconductor ceramic material disclosed by the invention, Y2O3 is adopted in ZrO2, and positively charged oxygen ion vacancies can be generated in crystal lattices, thus improving the electrical conductivity of ZrO2; a crystal boundary phase in the ZrO2 material is mainly formed by segregating impurities of SiO2 and the like in the raw material to a crystal boundary during the sintering process; the doping of Ti element enables the Ti element to enrich in the position of the ZrO2 crystal boundary, and the crystal boundary provides electrons capable of freely moving at a normal temperature, so that the electrical conductivity is greatly improved.
Preparation method for titanium and yttrium co-doped zirconia normal-temperature semiconductor ceramic material
The invention discloses a preparation method for a titanium and yttrium co-doped zirconia normal-temperature semiconductor ceramic material. The preparation method comprises the following steps: carrying out a powder mixing treatment on ZrO2 powder, Y2O3 powder and Ti powder, and then taking out and drying to obtain mixed powder; carrying out granulation and sample compaction on the mixed powder to obtain a shaped sample; dumping and sintering the shaped sample; placing the shaped sample subjected to the dumping and sintering in a vacuum furnace and carrying out high-temperature sintering, and cooling with the furnace to obtain the titanium and yttrium co-doped zirconia normal-temperature semiconductor ceramic material. According to the preparation method for the titanium and yttrium co-doped zirconia normal-temperature semiconductor ceramic material disclosed by the invention, Y2O3 is adopted in ZrO2, and positively charged oxygen ion vacancies can be generated in crystal lattices, thus improving the electrical conductivity of ZrO2; a crystal boundary phase in the ZrO2 material is mainly formed by segregating impurities of SiO2 and the like in the raw material to a crystal boundary during the sintering process; the doping of Ti element enables the Ti element to enrich in the position of the ZrO2 crystal boundary, and the crystal boundary provides electrons capable of freely moving at a normal temperature, so that the electrical conductivity is greatly improved.
Preparation method for titanium and yttrium co-doped zirconia normal-temperature semiconductor ceramic material
LYU ZHENLIN (author) / ZENG QIANQIAN (author) / JIA LEI (author) / YUE MINGJUAN (author)
2015-09-30
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
ZIRCONIA-BASED MATERIAL DOPED WITH YTTRIUM AND LANTHANUM
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