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Anti-ferroelectric ceramic material which is sintered at low temperatures and has high energy storage density and method for preparing anti-ferroelectric ceramic material
The invention relates to an anti-ferroelectric ceramic material which is sintered at low temperatures and has high energy storage density and a method for preparing the anti-ferroelectric ceramic material. Chemical components of the anti-ferroelectric ceramic material conform to a chemical general formula of Pb<0.97>La<0.02> (ZrSnTi<1-x-y>) O<3>+a*wt.% CuO, wherein the x is larger than or equal to 0.4 and is smaller than or equal to 0.6, the y is larger than or equal to 0.4 and is smaller than or equal to 0.6, the a is larger than or equal to 0.2 and is smaller than or equal to 1, the x and the y are mole numbers, and the a is a mass percent. The anti-ferroelectric ceramic material and the method have the advantages that appropriate sintering additives are chosen, and appropriate Zr/Sn/Ti ratios are adjusted, so that the PLZST anti-ferroelectric energy storage ceramic material sintered at the temperatures of 950-1000 DEG C can be obtained; the anti-ferroelectric ceramic material is high in energy storage density and energy storage efficiency, can be used for manufacturing energy storage multilayer ceramic capacitors and has an excellent application prospect.
Anti-ferroelectric ceramic material which is sintered at low temperatures and has high energy storage density and method for preparing anti-ferroelectric ceramic material
The invention relates to an anti-ferroelectric ceramic material which is sintered at low temperatures and has high energy storage density and a method for preparing the anti-ferroelectric ceramic material. Chemical components of the anti-ferroelectric ceramic material conform to a chemical general formula of Pb<0.97>La<0.02> (ZrSnTi<1-x-y>) O<3>+a*wt.% CuO, wherein the x is larger than or equal to 0.4 and is smaller than or equal to 0.6, the y is larger than or equal to 0.4 and is smaller than or equal to 0.6, the a is larger than or equal to 0.2 and is smaller than or equal to 1, the x and the y are mole numbers, and the a is a mass percent. The anti-ferroelectric ceramic material and the method have the advantages that appropriate sintering additives are chosen, and appropriate Zr/Sn/Ti ratios are adjusted, so that the PLZST anti-ferroelectric energy storage ceramic material sintered at the temperatures of 950-1000 DEG C can be obtained; the anti-ferroelectric ceramic material is high in energy storage density and energy storage efficiency, can be used for manufacturing energy storage multilayer ceramic capacitors and has an excellent application prospect.
Anti-ferroelectric ceramic material which is sintered at low temperatures and has high energy storage density and method for preparing anti-ferroelectric ceramic material
WANG GENSHUI (author) / XU CHENHONG (author) / LIU ZHEN (author) / CHEN XUEFENG (author) / DONG XIANLIN (author) / CAO FEI (author)
2015-12-30
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
Anti-ferroelectric ceramic material with temperature stability and energy storage ceramic capacitor
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