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High-heat-conduction ceramic substrate material and preparing method thereof
The invention discloses a high-heat-conduction ceramic substrate material. The high-heat-conduction ceramic substrate material is prepared from, by weight, 82 parts to 90 parts of aluminum oxide powder, 7 parts to 18 parts of silicon carbide, 6 parts to 15 parts of mullite, 4 parts to 14 parts of bentonite, 3 parts to 8 parts of carbon fibers, 5 parts to 16 parts of fluorapatite, 3 parts to 13 parts of vanadium nitride, 4 parts to 10 parts of yttrium oxide, 11 parts to 20 parts of binding agents and 35 parts to 48 parts of solvents. The invention further discloses a preparing method of the high-heat-conduction ceramic substrate material. The heat conductivity coefficient of the ceramic substrate material prepared with the preparing method is larger than 1.8 W/m.K, the coefficient of thermal expansion is 5.23*10<-6>/K to 6.08*10<-6>/K and is close to the coefficient of thermal expansion of wafer silicon, and the matching degree is good; in addition, the breaking strength of the prepared ceramic substrate material is larger than or equal to 0.7 Mpa, and good comprehensive performance is shown.
High-heat-conduction ceramic substrate material and preparing method thereof
The invention discloses a high-heat-conduction ceramic substrate material. The high-heat-conduction ceramic substrate material is prepared from, by weight, 82 parts to 90 parts of aluminum oxide powder, 7 parts to 18 parts of silicon carbide, 6 parts to 15 parts of mullite, 4 parts to 14 parts of bentonite, 3 parts to 8 parts of carbon fibers, 5 parts to 16 parts of fluorapatite, 3 parts to 13 parts of vanadium nitride, 4 parts to 10 parts of yttrium oxide, 11 parts to 20 parts of binding agents and 35 parts to 48 parts of solvents. The invention further discloses a preparing method of the high-heat-conduction ceramic substrate material. The heat conductivity coefficient of the ceramic substrate material prepared with the preparing method is larger than 1.8 W/m.K, the coefficient of thermal expansion is 5.23*10<-6>/K to 6.08*10<-6>/K and is close to the coefficient of thermal expansion of wafer silicon, and the matching degree is good; in addition, the breaking strength of the prepared ceramic substrate material is larger than or equal to 0.7 Mpa, and good comprehensive performance is shown.
High-heat-conduction ceramic substrate material and preparing method thereof
WENG YUFEI (author) / ZHANG QIXIAO (author)
2016-01-13
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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