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Novel Mg-doped NBT (Na0.5Bi0.5TiO3)-based lead-free dielectric ceramic material and preparation method thereof
The invention discloses a novel Mg-doped NBT (Na0.5Bi0.5TiO3)-based lead-free dielectric material and a preparation method. The material has the general chemical formula of NaBi(Ti0.98Mg0.02)6O14, five temperature points are divided with a conventional solid-state method, and the material is formed by two times of pre-sintering and one time of sintering. A prepared ceramic wafer is detected to have the very strong stable dielectric constant, when the sintering temperature is 1060 DEG C, the dielectric constant is as low as 25.804-26.9894 in the ambient temperature range of 43.7 DEG C-414.1 DEG C, the corresponding loss value is also several magnitude orders lower than that of ordinary NBT (approximately 0.01) and can be as low as 2.6*10<-5>, the wafer has the lower dielectric loss when compared with microwave ceramic with middle dielectric constants, and the wafer has the lower dielectric constant and the lower dielectric loss when compared with ferroelectric materials. The material can be widely applied to ferroelectric and dielectric materials, PCB substrate materials and microwave ceramic materials with the middle dielectric constants due to the advantages of highly stable dielectric constant and extremely low dielectric loss in the wide temperature range of the material.
Novel Mg-doped NBT (Na0.5Bi0.5TiO3)-based lead-free dielectric ceramic material and preparation method thereof
The invention discloses a novel Mg-doped NBT (Na0.5Bi0.5TiO3)-based lead-free dielectric material and a preparation method. The material has the general chemical formula of NaBi(Ti0.98Mg0.02)6O14, five temperature points are divided with a conventional solid-state method, and the material is formed by two times of pre-sintering and one time of sintering. A prepared ceramic wafer is detected to have the very strong stable dielectric constant, when the sintering temperature is 1060 DEG C, the dielectric constant is as low as 25.804-26.9894 in the ambient temperature range of 43.7 DEG C-414.1 DEG C, the corresponding loss value is also several magnitude orders lower than that of ordinary NBT (approximately 0.01) and can be as low as 2.6*10<-5>, the wafer has the lower dielectric loss when compared with microwave ceramic with middle dielectric constants, and the wafer has the lower dielectric constant and the lower dielectric loss when compared with ferroelectric materials. The material can be widely applied to ferroelectric and dielectric materials, PCB substrate materials and microwave ceramic materials with the middle dielectric constants due to the advantages of highly stable dielectric constant and extremely low dielectric loss in the wide temperature range of the material.
Novel Mg-doped NBT (Na0.5Bi0.5TiO3)-based lead-free dielectric ceramic material and preparation method thereof
CHEN YONG (author) / YANG SHUQIN (author) / LIANG XIONGWEI (author) / CAO WANQIANG (author) / ZHOU CHAO (author) / LI ZHANG (author)
2016-01-27
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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