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Piezoelectric material, piezoelectric element, method for manufacturing piezoelectric element, and electronic device
Disclosed are a piezoelectric material, a piezoelectric element, a method for manufacturing piezoelectric element, and an electronic device. The present invention can provide a lead-free piezoelectric material having a high piezoelectric constant in the room temperature range. The present invention for this purpose is a piezoelectric material including a main component containing a perovskite metal oxide represented by following general formula (1), Baa(Ti<1-x>Zr)O<3> (1) where x is more than or equal to 0.02 and less than or equal to 0.13 and a is more than or equal to 0.986 and less than or equal to 1.02, a first auxiliary component containing Mn, and a second auxiliary component containing trivalent Bi, wherein an amount of the contained Mn is 0.0020 mole or more and 0.0150 mole or less relative to 1 mole of the metal oxide, and an amount of the contained Bi is 0.00042 mole or more and 0.00850 mole or less relative to 1 mole of the metal oxide.
Piezoelectric material, piezoelectric element, method for manufacturing piezoelectric element, and electronic device
Disclosed are a piezoelectric material, a piezoelectric element, a method for manufacturing piezoelectric element, and an electronic device. The present invention can provide a lead-free piezoelectric material having a high piezoelectric constant in the room temperature range. The present invention for this purpose is a piezoelectric material including a main component containing a perovskite metal oxide represented by following general formula (1), Baa(Ti<1-x>Zr)O<3> (1) where x is more than or equal to 0.02 and less than or equal to 0.13 and a is more than or equal to 0.986 and less than or equal to 1.02, a first auxiliary component containing Mn, and a second auxiliary component containing trivalent Bi, wherein an amount of the contained Mn is 0.0020 mole or more and 0.0150 mole or less relative to 1 mole of the metal oxide, and an amount of the contained Bi is 0.00042 mole or more and 0.00850 mole or less relative to 1 mole of the metal oxide.
Piezoelectric material, piezoelectric element, method for manufacturing piezoelectric element, and electronic device
MATSUDA TAKANORI (author) / WATANABE TAKAYUKI (author) / MURAKAMI SHUNSUKE (author) / SAITO HIROSHI (author) / FURUTA TATSUO (author)
2016-01-27
Patent
Electronic Resource
English
| European Patent Office | 2016
PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, AND ELECTRONIC DEVICE
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PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
| European Patent Office | 2016
PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
| European Patent Office | 2016
Piezoelectric material, piezoelectric element, and electronic device
| European Patent Office | 2016