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Preparation method of B,N-codoped silicon carbide nano wave-absorbing material
The invention discloses a preparation method of a B,N-codoped silicon carbide nano wave-absorbing material. The preparation method specifically comprises the following steps of (1) weighing silica powder, carbon black powder, amorphous boron powder, silicon nitride powder and polytetrafluoroethylene powder, performing ball-milling and mixing on the same to prepare mixed powder A; (2) screening the mixed powder A through a 200-meshe sieve to obtain mixed powder B with the average grain diameter being less than 74mum; (3) placing the mixed powder B into a vacuum-atmosphere hot press sintering furnace, first performing vacuum treatment, then filling N2 gas, and reacting to obtain B,N-codoped 3C-SiC principal crystalline phase nano powder; (4) placing the B,N-codoped 3C-SiC principal crystalline phase nano powder into a chamber electric furnace, and performing heat treatment in an air atmosphere to prepare a high-purity B,N-codoped 3C-SiC nano powder wave-absorbing material. According to the preparation method of the B,N-codoped silicon carbide nano wave-absorbing material, provided by the invention, a SiC nano powder wave-absorbing material with good crystal form and good dielectric loss performance is prepared and the size of the dielectric constant of the material is controllable.
Preparation method of B,N-codoped silicon carbide nano wave-absorbing material
The invention discloses a preparation method of a B,N-codoped silicon carbide nano wave-absorbing material. The preparation method specifically comprises the following steps of (1) weighing silica powder, carbon black powder, amorphous boron powder, silicon nitride powder and polytetrafluoroethylene powder, performing ball-milling and mixing on the same to prepare mixed powder A; (2) screening the mixed powder A through a 200-meshe sieve to obtain mixed powder B with the average grain diameter being less than 74mum; (3) placing the mixed powder B into a vacuum-atmosphere hot press sintering furnace, first performing vacuum treatment, then filling N2 gas, and reacting to obtain B,N-codoped 3C-SiC principal crystalline phase nano powder; (4) placing the B,N-codoped 3C-SiC principal crystalline phase nano powder into a chamber electric furnace, and performing heat treatment in an air atmosphere to prepare a high-purity B,N-codoped 3C-SiC nano powder wave-absorbing material. According to the preparation method of the B,N-codoped silicon carbide nano wave-absorbing material, provided by the invention, a SiC nano powder wave-absorbing material with good crystal form and good dielectric loss performance is prepared and the size of the dielectric constant of the material is controllable.
Preparation method of B,N-codoped silicon carbide nano wave-absorbing material
LI ZHIMIN (author) / ZHANG MAOLIN (author) / YAN YANGXI (author) / HUANG YUNXIA (author) / SUN PENG (author) / HAO YUE (author)
2016-02-03
Patent
Electronic Resource
English
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