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Zirconium-doped gadolinium manganate multiferroic ceramic and preparation method thereof
The invention discloses a zirconium-doped gadolinium manganate multiferroic ceramic and a preparation method thereof, and belongs to the technical field of electronic ceramic. The chemical formula ofthe ceramic material is GdMn<1-x>ZrO<3>, and the doping amount x is more than 0 and less than or equal to 0.10. The GdMn<1-x>ZrO<3> powder is prepared by a sol-gel method. The ceramic material has a single-phase structure, room-temperature giant dielectric properties and low-temperature magnetism, and the dielectric properties and magnetism of the material can be adjusted by changing the doping amount of Zr<4+>. The method is simple in preparation process, low in sintering phase forming temperature, short in sintering time, low in cost, environmentally friendly and harmless, and has goodapplication prospects in the fields of high dielectric capacitors, information storage, sensitive magneto-electric sensors, energy converters, filters and the like.
本发明公开了一种锆掺杂锰酸钆多铁陶瓷及其制备方法，属于电子陶瓷技术领域。该陶瓷材料的化学式为GdMnZrO，其中，掺杂量的范围为：0＜≤0.10。GdMnZrO粉体采用溶胶凝胶法制备。该陶瓷材料具备单相结构、室温巨介电性能和低温磁性，并且通过改变Zr的掺杂量可以调节材料的介电性能和磁性。本发明制备工艺简单，烧结成相温度低，烧结时间短，成本低，环保无害，在高介电电容器、信息存储、敏感磁电传感器、能量转换器和滤波器等领域具有很好的应用前景。
Zirconium-doped gadolinium manganate multiferroic ceramic and preparation method thereof
The invention discloses a zirconium-doped gadolinium manganate multiferroic ceramic and a preparation method thereof, and belongs to the technical field of electronic ceramic. The chemical formula ofthe ceramic material is GdMn<1-x>ZrO<3>, and the doping amount x is more than 0 and less than or equal to 0.10. The GdMn<1-x>ZrO<3> powder is prepared by a sol-gel method. The ceramic material has a single-phase structure, room-temperature giant dielectric properties and low-temperature magnetism, and the dielectric properties and magnetism of the material can be adjusted by changing the doping amount of Zr<4+>. The method is simple in preparation process, low in sintering phase forming temperature, short in sintering time, low in cost, environmentally friendly and harmless, and has goodapplication prospects in the fields of high dielectric capacitors, information storage, sensitive magneto-electric sensors, energy converters, filters and the like.
本发明公开了一种锆掺杂锰酸钆多铁陶瓷及其制备方法，属于电子陶瓷技术领域。该陶瓷材料的化学式为GdMnZrO，其中，掺杂量的范围为：0＜≤0.10。GdMnZrO粉体采用溶胶凝胶法制备。该陶瓷材料具备单相结构、室温巨介电性能和低温磁性，并且通过改变Zr的掺杂量可以调节材料的介电性能和磁性。本发明制备工艺简单，烧结成相温度低，烧结时间短，成本低，环保无害，在高介电电容器、信息存储、敏感磁电传感器、能量转换器和滤波器等领域具有很好的应用前景。
Zirconium-doped gadolinium manganate multiferroic ceramic and preparation method thereof
一种锆掺杂锰酸钆多铁陶瓷及其制备方法
DAI HAIYANG (author) / PENG KE (author) / WANG MANMAN (author) / CHEN JING (author) / LI TAO (author) / LIU DEWEI (author) / XUE RENZHONG (author) / CHEN ZHENPING (author)
2020-05-29
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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