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Method for improving through-current capability of zinc oxide piezoresistor by regulating and controlling bismuth oxide crystal form, zinc oxide resistor disc and preparation method for zinc oxide resistor disc
The invention discloses a method for improving the through-current capability of a zinc oxide piezoresistor by regulating and controlling a bismuth oxide crystal form, a zinc oxide resistor disc and apreparation method for the zinc oxide resistor disc. According to the invention, through optimization of a zinc oxide resistor disc raw material formula, a sintering cooling rate, a post-sintering heat treatment temperature and heating and cooling rates, the regulation and control on the bismuth oxide crystal form in the zinc oxide resistor disc are realized; the ratio of two structures, namely beta-Bi2O3 and delta-Bi2O3, in a bismuth oxide crystal is reduced; the proportion of two crystal structures, namely alpha-Bi2O3 and gamma-Bi2O3, in the bismuth oxide crystal is increased; thus, the uniformity of the microscopic grain boundary structure of the zinc oxide resistor disc is effectively improved; the blank of a grain boundary layer is reduced; the crystal structures are distributed moreuniformly; and the through-current capacity of the resistor disc is further improved. Electrical performance test results show that the zinc oxide resistor disc prepared through the method provided by the invention is more stable under the action of an impact current compared with a traditional zinc oxide resistor disc,.
本发明公开了一种通过调控氧化铋晶体形态提升氧化锌压敏电阻通流能力的方法与氧化锌电阻片及其制备方法，通过对氧化锌电阻片原料配方、烧结降温速率和烧结后热处理的温度及升降温速率进行优化，实现了对氧化锌电阻片中氧化铋晶体形态的调控，减少了氧化铋晶体中β‑BiO与δ‑BiO两种结构的比例，并增加了氧化铋晶体中α‑BiO以及γ‑BiO两种晶体结构的占比，从而有效提升了氧化锌电阻片微观晶界结构的均匀性，减少了晶界层空白，使晶体结构分布更加均匀，进而提升了电阻片通流能力。经电气性能测试，利用本发明所述方法制备氧化锌电阻片，相对于传统氧化锌电阻片，在冲击电流作用下更加稳定。
Method for improving through-current capability of zinc oxide piezoresistor by regulating and controlling bismuth oxide crystal form, zinc oxide resistor disc and preparation method for zinc oxide resistor disc
The invention discloses a method for improving the through-current capability of a zinc oxide piezoresistor by regulating and controlling a bismuth oxide crystal form, a zinc oxide resistor disc and apreparation method for the zinc oxide resistor disc. According to the invention, through optimization of a zinc oxide resistor disc raw material formula, a sintering cooling rate, a post-sintering heat treatment temperature and heating and cooling rates, the regulation and control on the bismuth oxide crystal form in the zinc oxide resistor disc are realized; the ratio of two structures, namely beta-Bi2O3 and delta-Bi2O3, in a bismuth oxide crystal is reduced; the proportion of two crystal structures, namely alpha-Bi2O3 and gamma-Bi2O3, in the bismuth oxide crystal is increased; thus, the uniformity of the microscopic grain boundary structure of the zinc oxide resistor disc is effectively improved; the blank of a grain boundary layer is reduced; the crystal structures are distributed moreuniformly; and the through-current capacity of the resistor disc is further improved. Electrical performance test results show that the zinc oxide resistor disc prepared through the method provided by the invention is more stable under the action of an impact current compared with a traditional zinc oxide resistor disc,.
本发明公开了一种通过调控氧化铋晶体形态提升氧化锌压敏电阻通流能力的方法与氧化锌电阻片及其制备方法，通过对氧化锌电阻片原料配方、烧结降温速率和烧结后热处理的温度及升降温速率进行优化，实现了对氧化锌电阻片中氧化铋晶体形态的调控，减少了氧化铋晶体中β‑BiO与δ‑BiO两种结构的比例，并增加了氧化铋晶体中α‑BiO以及γ‑BiO两种晶体结构的占比，从而有效提升了氧化锌电阻片微观晶界结构的均匀性，减少了晶界层空白，使晶体结构分布更加均匀，进而提升了电阻片通流能力。经电气性能测试，利用本发明所述方法制备氧化锌电阻片，相对于传统氧化锌电阻片，在冲击电流作用下更加稳定。
Method for improving through-current capability of zinc oxide piezoresistor by regulating and controlling bismuth oxide crystal form, zinc oxide resistor disc and preparation method for zinc oxide resistor disc
通过调控氧化铋晶体形态提升氧化锌压敏电阻通流能力的方法与氧化锌电阻片及其制备方法
LU JIAZHENG (author) / XIE PENGKANG (author) / HU JIANPING (author) / FANG ZHEN (author) / WU WEI (author) / JIANG ZHENGLONG (author)
2020-07-03
Patent
Electronic Resource
Chinese
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