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Preparation method of indium oxide transparent semiconductor ceramic
The invention relates to a preparation method of indium oxide transparent semiconductor ceramic. The preparation method comprises the following steps: putting an indium sulfate solution containing a cationic butadiyne surfactant PCDA-C6-NH3<+> into a constant-temperature water bath kettle, carrying out heating, dropwise adding a hexamethylenetetramine solution, conducting ageing after titration isfinished so as to obtain a white precipitate, and sequentially washing, drying and calcining the precipitate to obtain ultrafine indium oxide powder; and then subjecting the ultrafine indium oxide powder to prepressing, isostatic cool pressing, oxygen atmosphere sintering and machining to obtain the indium oxide transparent semiconductor ceramic. The method has the advantages of simple process and low cost; the hexamethylenetetramine solution is used as a precipitator, the cationic butadiyne surfactant PCDA-C6-NH3<+> is added, the indium oxide powder obtained through calcination is high in sintering activity, and the transparent ceramic prepared from the powder is high in density and has high application value.
本发明涉及一种氧化铟透明半导体陶瓷的制备方法。将含有阳离子型丁二炔表面活性剂PCDA‑C‑NH的硫酸铟溶液置于恒温水浴锅中加热，逐滴加入六亚甲基四胺溶液，滴定结束后陈化得到白色沉淀，沉淀依次进行洗涤、烘干、煅烧，得到氧化铟超细粉末；随后对其预压、冷等静压成型、氧气气氛烧结以及机械加工，得到氧化铟透明半导体陶瓷。优点是：工艺简单，成本较低；以六亚甲基四胺溶液为沉淀剂，并加入阳离子型丁二炔表面活性剂PCDA‑C‑NH，经煅烧获得的氧化铟粉体的烧结活性高，利用该粉体获得的透明陶瓷致密度高，具有较高的应用价值。
Preparation method of indium oxide transparent semiconductor ceramic
The invention relates to a preparation method of indium oxide transparent semiconductor ceramic. The preparation method comprises the following steps: putting an indium sulfate solution containing a cationic butadiyne surfactant PCDA-C6-NH3<+> into a constant-temperature water bath kettle, carrying out heating, dropwise adding a hexamethylenetetramine solution, conducting ageing after titration isfinished so as to obtain a white precipitate, and sequentially washing, drying and calcining the precipitate to obtain ultrafine indium oxide powder; and then subjecting the ultrafine indium oxide powder to prepressing, isostatic cool pressing, oxygen atmosphere sintering and machining to obtain the indium oxide transparent semiconductor ceramic. The method has the advantages of simple process and low cost; the hexamethylenetetramine solution is used as a precipitator, the cationic butadiyne surfactant PCDA-C6-NH3<+> is added, the indium oxide powder obtained through calcination is high in sintering activity, and the transparent ceramic prepared from the powder is high in density and has high application value.
本发明涉及一种氧化铟透明半导体陶瓷的制备方法。将含有阳离子型丁二炔表面活性剂PCDA‑C‑NH的硫酸铟溶液置于恒温水浴锅中加热，逐滴加入六亚甲基四胺溶液，滴定结束后陈化得到白色沉淀，沉淀依次进行洗涤、烘干、煅烧，得到氧化铟超细粉末；随后对其预压、冷等静压成型、氧气气氛烧结以及机械加工，得到氧化铟透明半导体陶瓷。优点是：工艺简单，成本较低；以六亚甲基四胺溶液为沉淀剂，并加入阳离子型丁二炔表面活性剂PCDA‑C‑NH，经煅烧获得的氧化铟粉体的烧结活性高，利用该粉体获得的透明陶瓷致密度高，具有较高的应用价值。
Preparation method of indium oxide transparent semiconductor ceramic
一种氧化铟透明半导体陶瓷的制备方法
LYU BIN (author) / WANG XINYUAN (author) / PAN SHANGKE (author) / SUN ZHIGANG (author)
2020-07-28
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Preparation method of porous indium oxide ceramic thermoelectric material
| European Patent Office | 2024