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Strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick-film ceramic as well as preparation method and application thereof
The invention belongs to the technical field of dielectric materials, and discloses a strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick-film ceramic as well as a preparation method and application thereof. The molecular formula of the thick-film ceramic is PbxSryLaz(ZrnSnmTiv)O3, and x is equal to 0.85 to 0.88, y is equal to 0.06 to 0.09, z is equal to 0.06, n is equal to 0.45 to 0.8, m is equal to 0.15 to 0.5, and v is equal to 0.05. The thickness of a strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick film prepared by a tape casting process is controllable, the thickness of a single layer is 40-50 microns, and the number of overlapped layers reach 500-1000. The thick-film ceramic is good and uniform in compactness and has a good energy storage performance and energy storage efficiency, the energy storage density of the thick-film ceramic can reach 3.7-3.9 J/cm<3>, the energy storage efficiency of the thick-film ceramic is higher than 89.5%, and the thick-film ceramic has good application prospects in capacitors with zirconium energy storage density.
本发明属于电介质材料技术领域，公开一种掺锶锆钛锡酸镧铅弛豫性反铁电厚膜陶瓷及其应用。所述厚膜陶瓷的分子式为PbSrLa(ZrSnTi)O，其中，x＝0.85～0.88，y＝0.06～0.09，z＝0.06，n＝0.45～0.8，m＝0.15～0.5，v＝0.05。本发明通过流延成型的工艺制备的掺锶锆钛锡酸镧铅弛豫性反铁电体陶瓷厚膜的厚度可控，其单层的厚度为40～50微米，多层的厚度可叠为500～1000层。该厚膜陶瓷其致密性好且均匀，并具有良好的储能性能和储能效率，其储能密度能达到3.7～3.9J/cm，其储能效率高于89.5％，其在锆储能密度的电容器中有良好的应用前景。
Strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick-film ceramic as well as preparation method and application thereof
The invention belongs to the technical field of dielectric materials, and discloses a strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick-film ceramic as well as a preparation method and application thereof. The molecular formula of the thick-film ceramic is PbxSryLaz(ZrnSnmTiv)O3, and x is equal to 0.85 to 0.88, y is equal to 0.06 to 0.09, z is equal to 0.06, n is equal to 0.45 to 0.8, m is equal to 0.15 to 0.5, and v is equal to 0.05. The thickness of a strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick film prepared by a tape casting process is controllable, the thickness of a single layer is 40-50 microns, and the number of overlapped layers reach 500-1000. The thick-film ceramic is good and uniform in compactness and has a good energy storage performance and energy storage efficiency, the energy storage density of the thick-film ceramic can reach 3.7-3.9 J/cm<3>, the energy storage efficiency of the thick-film ceramic is higher than 89.5%, and the thick-film ceramic has good application prospects in capacitors with zirconium energy storage density.
本发明属于电介质材料技术领域，公开一种掺锶锆钛锡酸镧铅弛豫性反铁电厚膜陶瓷及其应用。所述厚膜陶瓷的分子式为PbSrLa(ZrSnTi)O，其中，x＝0.85～0.88，y＝0.06～0.09，z＝0.06，n＝0.45～0.8，m＝0.15～0.5，v＝0.05。本发明通过流延成型的工艺制备的掺锶锆钛锡酸镧铅弛豫性反铁电体陶瓷厚膜的厚度可控，其单层的厚度为40～50微米，多层的厚度可叠为500～1000层。该厚膜陶瓷其致密性好且均匀，并具有良好的储能性能和储能效率，其储能密度能达到3.7～3.9J/cm，其储能效率高于89.5％，其在锆储能密度的电容器中有良好的应用前景。
Strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick-film ceramic as well as preparation method and application thereof
一种掺锶锆钛锡酸镧铅弛豫性反铁电厚膜陶瓷及其制备方法和应用
LU SHENGGUO (author) / ZHAO PENGFEI (author) / WANG SHIBIN (author) / YAO LILI (author)
2020-07-31
Patent
Electronic Resource
Chinese
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