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Microwave dielectric ceramic material as well as preparation method and application thereof
The invention discloses a microwave dielectric ceramic material which comprises the following components in percentage by mass: 95-98wt% of a main material and 2-5wt% of additives, the structural expression of the main material is (Pbx/4Bix/2) (Alx/3Mo2x/3V1-x) O4, x is more than or equal to 0.05 and less than or equal to 0.85, the additives are Ni (CH3COO) 2, Mg (CH3COO) 2 and In (CH3COO) 3, themain material is based on an ABO4 structure, Pb < 2 + > and Bi < 3 + > jointly occupy the site A, Al < 3 + > and Mo < 6 + > composite particles occupy the site B, the Ni (CH3COO) 2, the Mg (CH3COO) 2and the In (CH3COO) 3 are added as the additives, and the relative dielectric constant of the sintered microwave dielectric ceramic material is 75-85. The microwave performance is good, the loss is low, and the temperature coefficient of resonance frequency can meet the requirement of 0ppm/DEG C. The invention further provides a preparation method and application of the microwave dielectric ceramic material, the sintering temperature is low in the preparation process, and the microwave dielectric ceramic material is suitable for multi-layer low-temperature co-fired ceramic electronic components such as microwave dielectric ceramic antennas, has the characteristics of good stability and excellent performance, and can be widely applied to the field of 5G communication.
本发明公开了一种微波介质陶瓷材料，包括主料和添加剂，各成分的质量百分比为：主料95‑98wt％、添加剂2‑5wt％，主料的结构表达式为(PbBi)(AlMoV)O，其中0.05≤x≤0.85，添加剂为Ni(CHCOO)、Mg(CHCOO)和In(CHCOO)。其中主料以ABO结构为基础，Pb和Bi离子联合占据A位，Al和Mo的复合粒子占据B位，添加Ni(CHCOO)、Mg(CHCOO)和In(CHCOO)作为添加剂，烧结得到的微波介质陶瓷材料相对介电常数在75‑85之间，微波性能好，低损耗，并且谐振频率温度系数可满足0ppm/℃的要求。本发明还提供了一种微波介质陶瓷材料的制备方法及其应用，在制备过程中烧结温度较低，适用于微波介质陶瓷天线等多层低温共烧陶瓷电子元器件，具有稳定性好，性能优异的特点，可广泛应用于5G通信领域。
Microwave dielectric ceramic material as well as preparation method and application thereof
The invention discloses a microwave dielectric ceramic material which comprises the following components in percentage by mass: 95-98wt% of a main material and 2-5wt% of additives, the structural expression of the main material is (Pbx/4Bix/2) (Alx/3Mo2x/3V1-x) O4, x is more than or equal to 0.05 and less than or equal to 0.85, the additives are Ni (CH3COO) 2, Mg (CH3COO) 2 and In (CH3COO) 3, themain material is based on an ABO4 structure, Pb < 2 + > and Bi < 3 + > jointly occupy the site A, Al < 3 + > and Mo < 6 + > composite particles occupy the site B, the Ni (CH3COO) 2, the Mg (CH3COO) 2and the In (CH3COO) 3 are added as the additives, and the relative dielectric constant of the sintered microwave dielectric ceramic material is 75-85. The microwave performance is good, the loss is low, and the temperature coefficient of resonance frequency can meet the requirement of 0ppm/DEG C. The invention further provides a preparation method and application of the microwave dielectric ceramic material, the sintering temperature is low in the preparation process, and the microwave dielectric ceramic material is suitable for multi-layer low-temperature co-fired ceramic electronic components such as microwave dielectric ceramic antennas, has the characteristics of good stability and excellent performance, and can be widely applied to the field of 5G communication.
本发明公开了一种微波介质陶瓷材料，包括主料和添加剂，各成分的质量百分比为：主料95‑98wt％、添加剂2‑5wt％，主料的结构表达式为(PbBi)(AlMoV)O，其中0.05≤x≤0.85，添加剂为Ni(CHCOO)、Mg(CHCOO)和In(CHCOO)。其中主料以ABO结构为基础，Pb和Bi离子联合占据A位，Al和Mo的复合粒子占据B位，添加Ni(CHCOO)、Mg(CHCOO)和In(CHCOO)作为添加剂，烧结得到的微波介质陶瓷材料相对介电常数在75‑85之间，微波性能好，低损耗，并且谐振频率温度系数可满足0ppm/℃的要求。本发明还提供了一种微波介质陶瓷材料的制备方法及其应用，在制备过程中烧结温度较低，适用于微波介质陶瓷天线等多层低温共烧陶瓷电子元器件，具有稳定性好，性能优异的特点，可广泛应用于5G通信领域。
Microwave dielectric ceramic material as well as preparation method and application thereof
一种微波介质陶瓷材料及其制备方法和应用
YANG QIAN (author) / WEI HAILIANG (author) / LI JINGTAO (author) / LIU TAO (author)
2020-08-04
Patent
Electronic Resource
Chinese
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