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Low-temperature-sintered high-quality-factor microwave dielectric ceramic and preparation method thereof
The invention relates to low-temperature-sintered high-quality-factor microwave dielectric ceramic and a preparation method thereof. According to the preparation method, sintering aids including Bi2O3and CuO are added; the chemical formula of the microwave dielectric ceramic is RM<2x+1>Ti<1+x>O<13>+y(0.5Bi<2>O<3>+CuO), wherein R is one or a combination of more selected from La, Ce, Y, Pr, Dy and Eu, M is one or a combination of more selected from ZnO, NbO<2>, MgO and CaO, x is more than or equal to 0.2 and less than or equal to 1, and y is more than or equal to 1 and less than or equal to2 wt%; and by adding rare earth oxide for modification and a small amount of oxide as a sintering aid, the sintering temperature of the microwave dielectric ceramic can be reduced to 800-950 DEG C, and the microwave dielectric property of the microwave dielectric ceramic is excellent. According to the obtained microwave dielectric ceramic, a dielectric constant is 17-23, the value of Q*f is not lower than 50000 GHz, and a resonant frequency coefficient is small. The preparation method is simple in process, reduces preparation cost, realizes compact sintering and improves thermal conductivity,and the microwave dielectric ceramic can be applied to 5G base stations.
本发明涉及一种低温烧结高品质因素微波介质陶瓷及其制备方法,通过添加烧结助剂Bi2O3+CuO,组成其化学式组成为RxM2x+1Ti1+xO13+y(0.5Bi2O3+CuO),其中R=La、Ce、Y、Pr、Dy、Eu的一种或几种的组合,M为ZnO、NbO2、MgO、CaO的一种或几种的组合,0.2≤x≤1,1≤y≤2wt%。通过添加稀土氧化物改性和少量的氧化物作为烧结助剂,其烧结温度可以降低到800~950℃,并且还具有优异微波介电性能。所得到的微波介电陶瓷,介电常数为17~23,Q*f值不低于50000GHz,以及较小的谐振频率系数。该制备方法工艺简单,降低了制备成本,致密化烧结,提高导热率,可应用于5G基站用微波介质陶瓷。
Low-temperature-sintered high-quality-factor microwave dielectric ceramic and preparation method thereof
The invention relates to low-temperature-sintered high-quality-factor microwave dielectric ceramic and a preparation method thereof. According to the preparation method, sintering aids including Bi2O3and CuO are added; the chemical formula of the microwave dielectric ceramic is RM<2x+1>Ti<1+x>O<13>+y(0.5Bi<2>O<3>+CuO), wherein R is one or a combination of more selected from La, Ce, Y, Pr, Dy and Eu, M is one or a combination of more selected from ZnO, NbO<2>, MgO and CaO, x is more than or equal to 0.2 and less than or equal to 1, and y is more than or equal to 1 and less than or equal to2 wt%; and by adding rare earth oxide for modification and a small amount of oxide as a sintering aid, the sintering temperature of the microwave dielectric ceramic can be reduced to 800-950 DEG C, and the microwave dielectric property of the microwave dielectric ceramic is excellent. According to the obtained microwave dielectric ceramic, a dielectric constant is 17-23, the value of Q*f is not lower than 50000 GHz, and a resonant frequency coefficient is small. The preparation method is simple in process, reduces preparation cost, realizes compact sintering and improves thermal conductivity,and the microwave dielectric ceramic can be applied to 5G base stations.
本发明涉及一种低温烧结高品质因素微波介质陶瓷及其制备方法,通过添加烧结助剂Bi2O3+CuO,组成其化学式组成为RxM2x+1Ti1+xO13+y(0.5Bi2O3+CuO),其中R=La、Ce、Y、Pr、Dy、Eu的一种或几种的组合,M为ZnO、NbO2、MgO、CaO的一种或几种的组合,0.2≤x≤1,1≤y≤2wt%。通过添加稀土氧化物改性和少量的氧化物作为烧结助剂,其烧结温度可以降低到800~950℃,并且还具有优异微波介电性能。所得到的微波介电陶瓷,介电常数为17~23,Q*f值不低于50000GHz,以及较小的谐振频率系数。该制备方法工艺简单,降低了制备成本,致密化烧结,提高导热率,可应用于5G基站用微波介质陶瓷。
Low-temperature-sintered high-quality-factor microwave dielectric ceramic and preparation method thereof
一种低温烧结高品质因素微波介质陶瓷及其制备方法
LI CHUNHONG (author) / ZHONG YUN (author) / KANG XIAOLI (author) / CUI XUDONG (author)
2020-12-01
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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