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Anti-ferroelectric ceramic material and low-temperature sintering method thereof
The invention relates to an anti-ferroelectric ceramic material and a low-temperature sintering method thereof. The chemical general formula of the anti-ferroelectric ceramic material is PbZrO3. Ag2Opowder is added into anti-ferroelectric ceramic material powder in the secondary ball milling process, and a compact ceramic body is prepared by regulating and controlling the content of Ag2O, compensating lead atmosphere in the sintering process and the like. The sintering temperature of the system is as low as 1050 DEG C, the prepared ceramic body is relatively good in ceramic forming property,and the double ferroelectric hysteresis loop of the PbZrO3 antiferroelectric ceramic at room temperature is obtained. Compared with the prior art, the dielectric material prepared by the invention hasthe advantages of high energy storage density (8.82 J/cm<3>), higher energy storage efficiency (71.71%) and the like, and has very important significance for developing pulse power capacitors with high energy storage density and low-temperature firing capability.
本发明涉及一种反铁电陶瓷材料及其低温烧结方法，该反铁电陶瓷材料的化学通式为PbZrO3，本发明通过在二次球磨过程中在反铁电陶瓷材料粉体中加入Ag2O粉末，通过调控Ag2O含量以及在烧结过程中补偿铅气氛等方法制得致密瓷体。该体系烧结温度低至1050℃，制备的瓷体成瓷性较好，实现了室温下PbZrO3反铁电陶瓷的双电滞回线的获得。与现有技术相比，本发明所制备的介质材料具有储能密度高(8.82J/cm3)、储能效率较高(71.71％)等优点，对于开发高储能密度、可低温烧制的脉冲功率电容器具有非常重要的意义。
Anti-ferroelectric ceramic material and low-temperature sintering method thereof
The invention relates to an anti-ferroelectric ceramic material and a low-temperature sintering method thereof. The chemical general formula of the anti-ferroelectric ceramic material is PbZrO3. Ag2Opowder is added into anti-ferroelectric ceramic material powder in the secondary ball milling process, and a compact ceramic body is prepared by regulating and controlling the content of Ag2O, compensating lead atmosphere in the sintering process and the like. The sintering temperature of the system is as low as 1050 DEG C, the prepared ceramic body is relatively good in ceramic forming property,and the double ferroelectric hysteresis loop of the PbZrO3 antiferroelectric ceramic at room temperature is obtained. Compared with the prior art, the dielectric material prepared by the invention hasthe advantages of high energy storage density (8.82 J/cm<3>), higher energy storage efficiency (71.71%) and the like, and has very important significance for developing pulse power capacitors with high energy storage density and low-temperature firing capability.
本发明涉及一种反铁电陶瓷材料及其低温烧结方法，该反铁电陶瓷材料的化学通式为PbZrO3，本发明通过在二次球磨过程中在反铁电陶瓷材料粉体中加入Ag2O粉末，通过调控Ag2O含量以及在烧结过程中补偿铅气氛等方法制得致密瓷体。该体系烧结温度低至1050℃，制备的瓷体成瓷性较好，实现了室温下PbZrO3反铁电陶瓷的双电滞回线的获得。与现有技术相比，本发明所制备的介质材料具有储能密度高(8.82J/cm3)、储能效率较高(71.71％)等优点，对于开发高储能密度、可低温烧制的脉冲功率电容器具有非常重要的意义。
Anti-ferroelectric ceramic material and low-temperature sintering method thereof
一种反铁电陶瓷材料及其低温烧结方法
ZHAI JIWEI (author) / GE GUANGLONG (author) / HUANG KAIWEI (author) / SHEN BO (author)
2020-12-11
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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