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Zirconium titanium tin lead niobate thick film ceramic and preparation method and application thereof
The invention belongs to the technical field of dielectric materials, and discloses a zirconium titanium tin lead niobate thick film ceramic and a preparation method and application thereof. The molecular formula of the thick film ceramic is PbxNby (ZrnSnmTiv) zO3, and x is equal to 0.9-0.99, y is equal to 0-0.02, n is equal to 0.1-1.5, m is equal to 0-1.5, v is equal to 0-0.15, and z is equal to0.9-1. The preparation method comprises the following steps: ball-milling and mixing PbO, ZrO2, SnO2, TiO2 and Nb2O5 according to a stoichiometric ratio, drying at 60-80 DEG C, presintering the sievedceramic powder at 950-1000 DEG C, carrying out secondary ball-milling, drying the mixed powder at 60-80 DEG C, and adding a dispersing agent, a binder and a mixed solution into the obtained ceramic powder to obtain ceramic slurry; carrying out tape casting on the ceramic slurry to obtain a thick film green body, discharging glue at the temperature of 400-600 DEG C, and sintering at the temperature of 1250-1300 DEG C to obtain the ceramic. The thick film has the advantages of small size and good compatibility with an integrated circuit.
本发明属于电介质材料技术领域，公开一种锆钛锡铌酸铅厚膜陶瓷及其制备方法和应用。该厚膜陶瓷的分子式为PbxNby(ZrnSnmTiv)zO3，其中，x＝＝0.9～0.99，y＝0～0.02，n＝0.1～1.5，m＝0～1.5，v＝0～0.15，z＝0.9～1；按照化学计量比将PbO、ZrO2、SnO2、TiO2、Nb2O5球磨混合后在60～80℃烘干，将过筛的陶瓷粉末在950～1000℃预烧后，进行二次球磨，将混合粉体在60～80℃烘干，将所得陶瓷粉体加入分散剂、粘结剂和混合溶液，制得陶瓷浆料；将该陶瓷浆料流延成型得到厚膜生坯后在400～600℃排胶，在1250～1300℃烧结制得。该厚膜具有尺寸小且能与集成电路兼容性好的优势。
Zirconium titanium tin lead niobate thick film ceramic and preparation method and application thereof
The invention belongs to the technical field of dielectric materials, and discloses a zirconium titanium tin lead niobate thick film ceramic and a preparation method and application thereof. The molecular formula of the thick film ceramic is PbxNby (ZrnSnmTiv) zO3, and x is equal to 0.9-0.99, y is equal to 0-0.02, n is equal to 0.1-1.5, m is equal to 0-1.5, v is equal to 0-0.15, and z is equal to0.9-1. The preparation method comprises the following steps: ball-milling and mixing PbO, ZrO2, SnO2, TiO2 and Nb2O5 according to a stoichiometric ratio, drying at 60-80 DEG C, presintering the sievedceramic powder at 950-1000 DEG C, carrying out secondary ball-milling, drying the mixed powder at 60-80 DEG C, and adding a dispersing agent, a binder and a mixed solution into the obtained ceramic powder to obtain ceramic slurry; carrying out tape casting on the ceramic slurry to obtain a thick film green body, discharging glue at the temperature of 400-600 DEG C, and sintering at the temperature of 1250-1300 DEG C to obtain the ceramic. The thick film has the advantages of small size and good compatibility with an integrated circuit.
本发明属于电介质材料技术领域，公开一种锆钛锡铌酸铅厚膜陶瓷及其制备方法和应用。该厚膜陶瓷的分子式为PbxNby(ZrnSnmTiv)zO3，其中，x＝＝0.9～0.99，y＝0～0.02，n＝0.1～1.5，m＝0～1.5，v＝0～0.15，z＝0.9～1；按照化学计量比将PbO、ZrO2、SnO2、TiO2、Nb2O5球磨混合后在60～80℃烘干，将过筛的陶瓷粉末在950～1000℃预烧后，进行二次球磨，将混合粉体在60～80℃烘干，将所得陶瓷粉体加入分散剂、粘结剂和混合溶液，制得陶瓷浆料；将该陶瓷浆料流延成型得到厚膜生坯后在400～600℃排胶，在1250～1300℃烧结制得。该厚膜具有尺寸小且能与集成电路兼容性好的优势。
Zirconium titanium tin lead niobate thick film ceramic and preparation method and application thereof
一种锆钛锡铌酸铅厚膜陶瓷及其制备方法和应用
LU SHENGGUO (author) / WANG SHIBIN (author) / ZHAO PENGFEI (author) / ZHAO XIAOBO (author) / YAO YINGBANG (author) / TAO TAO (author) / LIANG BO (author)
2021-01-12
Patent
Electronic Resource
Chinese
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