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ZnO-Bi2O3-based low-voltage voltage-sensitive ceramic capable of being sintered at low temperature and preparation method thereof
The invention discloses ZnO-Bi2O3-based low-voltage voltage-sensitive ceramic capable of being sintered at a low temperature and a preparation method thereof, and particularly relates to a ZnO-Bi2O3-based voltage-sensitive ceramic material which can be sintered at a low temperature of 900 DEG C and has high nonlinearity and low potential gradient and a device thereof. The material is composed of ZnO, Bi2O3, TiO2, Co2O3, MnO2 and B2O3, the formula comprises 98 mol% of ZnO, 0.5 mol% of Bi2O3, 0.5 mol% of TiO2, 0.5 mol% of Co2O3, 0.5 mol% of MnO2 and x wt% of B2O3, and x is larger than 0 and smaller than or equal to 6. According to the formula, after corresponding raw materials are weighed, the corresponding voltage-sensitive ceramic material is obtained after heat preservation is conducted for 2-5 hours at the temperature of 900 DEG C through a solid-phase synthesis method. When x is equal to 1, the comprehensive performance of the ZnO-Bi2O3-based piezoresistor obtained by the method isas follows: the voltage-sensitive field intensity is 130V/mm, the nonlinear coefficient alpha is up to 40, and the leakage current density JL is equal to 2.5 mu A/mm < 2 >; the ceramic material can beused for preparing a multilayer chip varistor taking pure silver as an inner electrode. In addition, the preparation method disclosed by the invention has the advantages of simple process, low energyconsumption, environmental friendliness and the like.
本发明公开了一种可低温烧结的ZnO‑Bi2O3基低压压敏陶瓷及其制备方法，具体为一种可在900℃低温烧结的具有高非线性、低电位梯度的ZnO‑Bi2O3基压敏陶瓷材料及其器件。材料由ZnO、Bi2O3、TiO2、Co2O3、MnO2和B2O3组成，配方为98 mol%ZnO+0.5 mol Bi2O3%+0.5 mol%TiO2+0.5 mol%Co2O3+0.5 mol%MnO2+x wt%B2O3，其中0
ZnO-Bi2O3-based low-voltage voltage-sensitive ceramic capable of being sintered at low temperature and preparation method thereof
The invention discloses ZnO-Bi2O3-based low-voltage voltage-sensitive ceramic capable of being sintered at a low temperature and a preparation method thereof, and particularly relates to a ZnO-Bi2O3-based voltage-sensitive ceramic material which can be sintered at a low temperature of 900 DEG C and has high nonlinearity and low potential gradient and a device thereof. The material is composed of ZnO, Bi2O3, TiO2, Co2O3, MnO2 and B2O3, the formula comprises 98 mol% of ZnO, 0.5 mol% of Bi2O3, 0.5 mol% of TiO2, 0.5 mol% of Co2O3, 0.5 mol% of MnO2 and x wt% of B2O3, and x is larger than 0 and smaller than or equal to 6. According to the formula, after corresponding raw materials are weighed, the corresponding voltage-sensitive ceramic material is obtained after heat preservation is conducted for 2-5 hours at the temperature of 900 DEG C through a solid-phase synthesis method. When x is equal to 1, the comprehensive performance of the ZnO-Bi2O3-based piezoresistor obtained by the method isas follows: the voltage-sensitive field intensity is 130V/mm, the nonlinear coefficient alpha is up to 40, and the leakage current density JL is equal to 2.5 mu A/mm < 2 >; the ceramic material can beused for preparing a multilayer chip varistor taking pure silver as an inner electrode. In addition, the preparation method disclosed by the invention has the advantages of simple process, low energyconsumption, environmental friendliness and the like.
本发明公开了一种可低温烧结的ZnO‑Bi2O3基低压压敏陶瓷及其制备方法，具体为一种可在900℃低温烧结的具有高非线性、低电位梯度的ZnO‑Bi2O3基压敏陶瓷材料及其器件。材料由ZnO、Bi2O3、TiO2、Co2O3、MnO2和B2O3组成，配方为98 mol%ZnO+0.5 mol Bi2O3%+0.5 mol%TiO2+0.5 mol%Co2O3+0.5 mol%MnO2+x wt%B2O3，其中0
ZnO-Bi2O3-based low-voltage voltage-sensitive ceramic capable of being sintered at low temperature and preparation method thereof
一种可低温烧结的ZnO-Bi2O3基低压压敏陶瓷及其制备方法
XU ZHIJUN (author) / CUI FANGFANG (author) / LIN WENWEN (author) / CHU RUIQING (author) / HE XIAOCHUN (author) / GUO XIANJUN (author) / LI GANG (author)
2021-01-15
Patent
Electronic Resource
Chinese
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