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Low-temperature welding process of high-pressure-resistant silicon carbide micro-reaction assembly
The invention discloses a high-pressure-resistant silicon carbide micro-reaction assembly and a low-temperature welding process. The process is characterized in that tetraethyl orthosilicate, dimethyldiethoxysilane and trimethyl borate are dissolved in ethanol, silicon carbide powder is added into a mixed solution to be coated on the welding surface of a silicon carbide micro-reaction plate, low-temperature welding is carried out in a hot-pressing furnace after slurry coating, cooling is performed to 500 DEG C or below, reheating is performed to 1600 DEG C, heat preservation is performed for 1hour, and secondary cooling is performed to obtain the silicon carbide micro-reaction assembly with the welding thickness. According to the invention, the welding temperature is low, the requirementfor a high-temperature welding furnace is lowered, and the welding cost is reduced; the silicon carbide ceramic is low in softening degree, deformation is easy to control, the depth is easy to control, the welding yield of the silicon carbide micro-reaction assembly is increased, and the welding cost is reduced; the silicon carbide micro-reaction assembly obtained by welding through the process ishigh in bonding strength, and the withstand voltage can reach 60 BAR or above; and the binding phase is silicon carbide ceramic which is resistant to strong acid and strong alkali corrosion and can be applied to various harsh reaction conditions.
本发明公开了一种耐高压碳化硅微反应组件及低温焊接工艺，将正硅酸乙酯、二甲基二乙氧基硅烷和硼酸三甲酯溶解于乙醇中，将碳化硅粉体加入到混合溶液中涂覆在要碳化硅微反应板焊接面。涂覆浆料后在热压炉中进行低温焊接。冷却到500℃以内时，重新加热到1600℃，保温时间为1小时后二次降温，得到焊接厚度的碳化硅微反应组件。本发明的焊接温度低，对高温焊接炉的要求降低，降低了焊接成本；碳化硅陶瓷软化程度低，容易控制变形，深度易于控制，提高了碳化硅微反应组件的焊接成品率，降低了焊接成本；采用该工艺焊接得到的碳化硅微反应组件结合强度高，耐压可达60BAR以上。且结合相为碳化硅陶瓷，耐强酸强碱腐蚀，能够应用于各种苛刻的反应工况。
Low-temperature welding process of high-pressure-resistant silicon carbide micro-reaction assembly
The invention discloses a high-pressure-resistant silicon carbide micro-reaction assembly and a low-temperature welding process. The process is characterized in that tetraethyl orthosilicate, dimethyldiethoxysilane and trimethyl borate are dissolved in ethanol, silicon carbide powder is added into a mixed solution to be coated on the welding surface of a silicon carbide micro-reaction plate, low-temperature welding is carried out in a hot-pressing furnace after slurry coating, cooling is performed to 500 DEG C or below, reheating is performed to 1600 DEG C, heat preservation is performed for 1hour, and secondary cooling is performed to obtain the silicon carbide micro-reaction assembly with the welding thickness. According to the invention, the welding temperature is low, the requirementfor a high-temperature welding furnace is lowered, and the welding cost is reduced; the silicon carbide ceramic is low in softening degree, deformation is easy to control, the depth is easy to control, the welding yield of the silicon carbide micro-reaction assembly is increased, and the welding cost is reduced; the silicon carbide micro-reaction assembly obtained by welding through the process ishigh in bonding strength, and the withstand voltage can reach 60 BAR or above; and the binding phase is silicon carbide ceramic which is resistant to strong acid and strong alkali corrosion and can be applied to various harsh reaction conditions.
本发明公开了一种耐高压碳化硅微反应组件及低温焊接工艺，将正硅酸乙酯、二甲基二乙氧基硅烷和硼酸三甲酯溶解于乙醇中，将碳化硅粉体加入到混合溶液中涂覆在要碳化硅微反应板焊接面。涂覆浆料后在热压炉中进行低温焊接。冷却到500℃以内时，重新加热到1600℃，保温时间为1小时后二次降温，得到焊接厚度的碳化硅微反应组件。本发明的焊接温度低，对高温焊接炉的要求降低，降低了焊接成本；碳化硅陶瓷软化程度低，容易控制变形，深度易于控制，提高了碳化硅微反应组件的焊接成品率，降低了焊接成本；采用该工艺焊接得到的碳化硅微反应组件结合强度高，耐压可达60BAR以上。且结合相为碳化硅陶瓷，耐强酸强碱腐蚀，能够应用于各种苛刻的反应工况。
Low-temperature welding process of high-pressure-resistant silicon carbide micro-reaction assembly
一种耐高压碳化硅微反应组件的低温焊接工艺
YAN YONGJIE (author)
2021-02-19
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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