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Oxidizing agent for grain boundary layer semiconducting ceramic substrate and coating method of oxidizing agent
The invention discloses an oxidizing agent for a grain boundary layer semiconducting ceramic substrate and a coating method of the oxidizing agent. The oxidizing agent comprises the following components in percentage by mass: 40% to 70% of Bi2O3, 20% to 50% of Pb3O4, 5% to 20% of CuO, 10% to 15% of B2O3, 5% to 15% of Al2O3, 0.1% to 5% of NiO and 0.1% to 5% of MnO2. The dielectric constant of the obtained grain boundary layer ceramic substrate is 30000 +/-3000, the dielectric loss is 0.3% to 0.8%, the insulation resistance is larger than or equal to 1011 omega, the capacity temperature change rate is smaller than or equal to +/-15% (-55 DEG C to 125 DEG C), the permissible deviation of the dielectric constant is smaller than +/-10%, and the problems that an existing oxidizing agent and a capacitor prepared through a coating method of the existing oxidizing agent are low in insulation resistance, large in capacitance fluctuation range and the like are solved. The main performance of a grain boundary layer single-layer ceramic capacitor is determined, the ceramic capacitor is suitable for batch production, and the development of high-performance and miniaturized single-layer ceramic capacitors is promoted.
一种晶界层半导化陶瓷基片用氧化剂及其涂覆方法，组分按质量百分比为：Bi2O3 40％～70％、Pb3O4 20％～50％、CuO 5％～20％、B2O3 10％～15％、Al2O3 5％～15％、NiO 0.1％～5％、MnO2 0.1％～5％。所得晶界层陶瓷基片介电常数为30000±3000，介电损耗0.3％～0.8％，绝缘电阻≥1011Ω，容量温度变化率≤±15％(‑55℃～125℃)，介电常数允许偏差＜±10％，解决了现有氧化剂及其涂覆方法制备的电容器绝缘电阻低、电容量波动范围大等问题。决定了晶界层单层陶瓷电容器的主要性能，适用于批量生产，推动了高性能、小型化单层陶瓷电容器的发展。
Oxidizing agent for grain boundary layer semiconducting ceramic substrate and coating method of oxidizing agent
The invention discloses an oxidizing agent for a grain boundary layer semiconducting ceramic substrate and a coating method of the oxidizing agent. The oxidizing agent comprises the following components in percentage by mass: 40% to 70% of Bi2O3, 20% to 50% of Pb3O4, 5% to 20% of CuO, 10% to 15% of B2O3, 5% to 15% of Al2O3, 0.1% to 5% of NiO and 0.1% to 5% of MnO2. The dielectric constant of the obtained grain boundary layer ceramic substrate is 30000 +/-3000, the dielectric loss is 0.3% to 0.8%, the insulation resistance is larger than or equal to 1011 omega, the capacity temperature change rate is smaller than or equal to +/-15% (-55 DEG C to 125 DEG C), the permissible deviation of the dielectric constant is smaller than +/-10%, and the problems that an existing oxidizing agent and a capacitor prepared through a coating method of the existing oxidizing agent are low in insulation resistance, large in capacitance fluctuation range and the like are solved. The main performance of a grain boundary layer single-layer ceramic capacitor is determined, the ceramic capacitor is suitable for batch production, and the development of high-performance and miniaturized single-layer ceramic capacitors is promoted.
一种晶界层半导化陶瓷基片用氧化剂及其涂覆方法，组分按质量百分比为：Bi2O3 40％～70％、Pb3O4 20％～50％、CuO 5％～20％、B2O3 10％～15％、Al2O3 5％～15％、NiO 0.1％～5％、MnO2 0.1％～5％。所得晶界层陶瓷基片介电常数为30000±3000，介电损耗0.3％～0.8％，绝缘电阻≥1011Ω，容量温度变化率≤±15％(‑55℃～125℃)，介电常数允许偏差＜±10％，解决了现有氧化剂及其涂覆方法制备的电容器绝缘电阻低、电容量波动范围大等问题。决定了晶界层单层陶瓷电容器的主要性能，适用于批量生产，推动了高性能、小型化单层陶瓷电容器的发展。
Oxidizing agent for grain boundary layer semiconducting ceramic substrate and coating method of oxidizing agent
一种晶界层半导化陶瓷基片用氧化剂及其涂覆方法
HE CHUANGCHUANG (author) / PANG JINBIAO (author) / YANG JUN (author) / WANG DANQIN (author) / HAN YUCHENG (author) / SHANG YONG (author)
2021-07-06
Patent
Electronic Resource
Chinese
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