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Method for inhibiting secondary electron emission coefficient of dielectric material
The invention discloses a method for inhibiting the secondary electron emission coefficient of a dielectric material, which comprises the following steps: selecting a ceramic sample and a polymer sample as research objects, and carrying out irradiation treatment on the samples by using gamma rays. Experiments prove that the resistivity of the dielectric material is reduced along with the increase of the irradiation dose, and the maximum value of the secondary electron emission coefficient is also reduced, so that the secondary electron emission coefficient of the dielectric material is inhibited to a certain extent. Compared with processes such as surface corrosion, photoetching and chemical methods for reducing the secondary electron emission coefficient, the method for inhibiting the secondary electron emission coefficient of a dielectric material through irradiation has the advantages of universality, simple process, low cost, simplicity and convenience in operation and the like.
本发明公开了一种抑制介质材料二次电子发射系数的方法,该方法选用陶瓷样品及聚合物样品作为研究对象,利用γ射线对样品进行辐照处理。经实验证实,随着辐照剂量的增大,介质材料的电阻率降低,二次电子发射系数的最大值也随之降低,从一定程度上抑制介质材料的二次电子发射系数。相比于表面腐蚀、光刻以及化学方法等工艺来降低二次电子发射系数,通过辐照来抑制介质材料二次电子发射系数的方法更具有普适性,工艺简单,成本小,操作简便等优点。
Method for inhibiting secondary electron emission coefficient of dielectric material
The invention discloses a method for inhibiting the secondary electron emission coefficient of a dielectric material, which comprises the following steps: selecting a ceramic sample and a polymer sample as research objects, and carrying out irradiation treatment on the samples by using gamma rays. Experiments prove that the resistivity of the dielectric material is reduced along with the increase of the irradiation dose, and the maximum value of the secondary electron emission coefficient is also reduced, so that the secondary electron emission coefficient of the dielectric material is inhibited to a certain extent. Compared with processes such as surface corrosion, photoetching and chemical methods for reducing the secondary electron emission coefficient, the method for inhibiting the secondary electron emission coefficient of a dielectric material through irradiation has the advantages of universality, simple process, low cost, simplicity and convenience in operation and the like.
本发明公开了一种抑制介质材料二次电子发射系数的方法,该方法选用陶瓷样品及聚合物样品作为研究对象,利用γ射线对样品进行辐照处理。经实验证实,随着辐照剂量的增大,介质材料的电阻率降低,二次电子发射系数的最大值也随之降低,从一定程度上抑制介质材料的二次电子发射系数。相比于表面腐蚀、光刻以及化学方法等工艺来降低二次电子发射系数,通过辐照来抑制介质材料二次电子发射系数的方法更具有普适性,工艺简单,成本小,操作简便等优点。
Method for inhibiting secondary electron emission coefficient of dielectric material
一种抑制介质材料二次电子发射系数的方法
XIANG FENG (author) / HONG XIAOFEI (author) / GU TENG (author) / LIU XIAOSHUAI (author) / DONG YIPENG (author)
2021-07-06
Patent
Electronic Resource
Chinese
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