A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SiHfBCN ceramic rich in Si3N4 nanowires and preparation method thereof
The invention relates to SiHfBCN ceramic rich in Si3N4 nanowires and a preparation method thereof, polyborosilazane (PBSZ) and polyhafnium oxyalkane (PHO) are mixed according to a certain volume ratio by adopting a precursor blending method, a saturated ethanol solution of a certain content of nickel catalyst is added, and then the SiHfBCN ceramic rich in Si3N4 nanowires is obtained through curing, cracking and high-temperature heat treatment. The diameter of the Si3N4 nanowire is less than 50nm, and the length of the Si3N4 nanowire is between 10 microns and 200 microns. The precipitation of the Si3N4 crystal enables the response of the SiHfBCN ceramic to electromagnetic waves to be changed from absorption or reflection to bias transmission. Due to the existence of the hafnium element, the Si3N4 nanowire still stably exists at the temperature of 1600 DEG C, meanwhile, due to the fact that the amorphous phase is rich in the hafnium element, the SiHfBCN ceramic prepared through the method also has excellent ablation resistance. The method can be applied to composite materials, can be used as a coating or a matrix, can serve as an electromagnetic wave impedance matching layer, and can also effectively improve the ablation resistance of the composite materials in an ultra-high temperature environment.
本发明涉及一种富含Si3N4纳米线的SiHfBCN陶瓷及制备方法，采用先驱体共混法将聚硼硅氮烷(PBSZ)和聚铪氧烷(PHO)按照一定体积比例混合，加入一定含量的镍系催化剂的饱和乙醇溶液，然后经固化、裂解和高温热处理得到富含Si3N4纳米线的SiHfBCN陶瓷。Si3N4纳米线的直径小于50nm，长度在10μm‑200μm之间。Si3N4晶体的析出使SiHfBCN陶瓷对电磁波的响应从吸收或反射变为偏透过。铪元素的存在使Si3N4纳米线在1600℃依旧稳定存在，同时由于非晶相富含铪元素，因而此方法制备的SiHfBCN陶瓷也具有优异的抗烧蚀性能。本发明能够适用于复合材料，可用作涂层或基体，充当电磁波阻抗匹配层，同时可有效提高其在超高温环境下的抗烧蚀能力。
SiHfBCN ceramic rich in Si3N4 nanowires and preparation method thereof
The invention relates to SiHfBCN ceramic rich in Si3N4 nanowires and a preparation method thereof, polyborosilazane (PBSZ) and polyhafnium oxyalkane (PHO) are mixed according to a certain volume ratio by adopting a precursor blending method, a saturated ethanol solution of a certain content of nickel catalyst is added, and then the SiHfBCN ceramic rich in Si3N4 nanowires is obtained through curing, cracking and high-temperature heat treatment. The diameter of the Si3N4 nanowire is less than 50nm, and the length of the Si3N4 nanowire is between 10 microns and 200 microns. The precipitation of the Si3N4 crystal enables the response of the SiHfBCN ceramic to electromagnetic waves to be changed from absorption or reflection to bias transmission. Due to the existence of the hafnium element, the Si3N4 nanowire still stably exists at the temperature of 1600 DEG C, meanwhile, due to the fact that the amorphous phase is rich in the hafnium element, the SiHfBCN ceramic prepared through the method also has excellent ablation resistance. The method can be applied to composite materials, can be used as a coating or a matrix, can serve as an electromagnetic wave impedance matching layer, and can also effectively improve the ablation resistance of the composite materials in an ultra-high temperature environment.
本发明涉及一种富含Si3N4纳米线的SiHfBCN陶瓷及制备方法，采用先驱体共混法将聚硼硅氮烷(PBSZ)和聚铪氧烷(PHO)按照一定体积比例混合，加入一定含量的镍系催化剂的饱和乙醇溶液，然后经固化、裂解和高温热处理得到富含Si3N4纳米线的SiHfBCN陶瓷。Si3N4纳米线的直径小于50nm，长度在10μm‑200μm之间。Si3N4晶体的析出使SiHfBCN陶瓷对电磁波的响应从吸收或反射变为偏透过。铪元素的存在使Si3N4纳米线在1600℃依旧稳定存在，同时由于非晶相富含铪元素，因而此方法制备的SiHfBCN陶瓷也具有优异的抗烧蚀性能。本发明能够适用于复合材料，可用作涂层或基体，充当电磁波阻抗匹配层，同时可有效提高其在超高温环境下的抗烧蚀能力。
SiHfBCN ceramic rich in Si3N4 nanowires and preparation method thereof
一种富含Si3N4纳米线的SiHfBCN陶瓷及制备方法
FAN XIAOMENG (author) / ZHANG MIN (author) / YE FANG (author) / XUE JIMEI (author) / FAN SHANGWU (author) / CHENG LAIFEI (author)
2021-07-23
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Si3N4 ceramic Cu-coated plate and preparation method thereof
| European Patent Office | 2024
Si3N4 ceramic copper-clad substrate and preparation method thereof
| European Patent Office | 2023
High-performance Si3N4 ceramic substrate and preparation method thereof
| European Patent Office | 2024
Prestress-enhanced Si3N4 ceramic substrate and preparation method thereof
| European Patent Office | 2024