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Lead-free piezoelectric film material and preparation method thereof
The invention discloses a lead-free piezoelectric film material and a preparation method thereof. The chemical general formula of the lead-free piezoelectric film material is (1-x%) (Bi<0.5>Na<0.5>) TiO<3>-x% BaZrO<3>. The preparation method comprises the following steps: aging a BNT-xBZ precursor solution to obtain sol; uniformly spin-coating the sol on a substrate to obtain a wet film; pyrolyzing and sintering the wet film to obtain an intermediate film; on the intermediate film, repeating sol spin-coating, pyrolysis and sintering treatment, and obtaining a film with the preset thickness; and carrying out annealing heat treatment on the film with the preset thickness to obtain the lead-free piezoelectric film material. According to the invention, BaZrO3 is introduced into a (Bi < 0.5 > Na < 0.5 >) TiO < 3 > matrix, so that a unique morphotropic phase boundary, namely a relaxation-ferroelectric phase boundary, is constructed; the piezoelectric activity of the film component located at the relaxation-ferroelectric phase boundary is enhanced, and a reversible field-induced phase change effect is generated under the action of an electric field, so that the strain performance is remarkably improved, and the strain and piezoelectric properties of the film component far exceed those of an existing lead-based material.
本发明公开了一种无铅压电薄膜材料及其制备方法，无铅压电薄膜材料的化学通式为：(1‑x％)(Bi0.5Na0.5)TiO3‑x％BaZrO3；包括，将BNT‑xBZ前驱体溶液陈化，得到溶胶；将溶胶均匀旋涂在基片上，得到湿膜；对湿膜进行热解，烧结处理，得到中间薄膜；在中间薄膜上，重复旋涂溶胶，热解及烧结处理，得到预设厚度的薄膜；对预设厚度的薄膜进行退火热处理，得到所述的无铅压电薄膜材料；本发明通过在(Bi0.5Na0.5)TiO3基体中引入BaZrO3，构建了独特的准同型相界，即弛豫‑铁电相界；位于弛豫‑铁电相界的薄膜组分压电活性增强，在电场作用下产生可逆的场致相变效应，从而获得显著提高的应变性能，其应变及压电性能远超现有的铅基材料。
Lead-free piezoelectric film material and preparation method thereof
The invention discloses a lead-free piezoelectric film material and a preparation method thereof. The chemical general formula of the lead-free piezoelectric film material is (1-x%) (Bi<0.5>Na<0.5>) TiO<3>-x% BaZrO<3>. The preparation method comprises the following steps: aging a BNT-xBZ precursor solution to obtain sol; uniformly spin-coating the sol on a substrate to obtain a wet film; pyrolyzing and sintering the wet film to obtain an intermediate film; on the intermediate film, repeating sol spin-coating, pyrolysis and sintering treatment, and obtaining a film with the preset thickness; and carrying out annealing heat treatment on the film with the preset thickness to obtain the lead-free piezoelectric film material. According to the invention, BaZrO3 is introduced into a (Bi < 0.5 > Na < 0.5 >) TiO < 3 > matrix, so that a unique morphotropic phase boundary, namely a relaxation-ferroelectric phase boundary, is constructed; the piezoelectric activity of the film component located at the relaxation-ferroelectric phase boundary is enhanced, and a reversible field-induced phase change effect is generated under the action of an electric field, so that the strain performance is remarkably improved, and the strain and piezoelectric properties of the film component far exceed those of an existing lead-based material.
本发明公开了一种无铅压电薄膜材料及其制备方法，无铅压电薄膜材料的化学通式为：(1‑x％)(Bi0.5Na0.5)TiO3‑x％BaZrO3；包括，将BNT‑xBZ前驱体溶液陈化，得到溶胶；将溶胶均匀旋涂在基片上，得到湿膜；对湿膜进行热解，烧结处理，得到中间薄膜；在中间薄膜上，重复旋涂溶胶，热解及烧结处理，得到预设厚度的薄膜；对预设厚度的薄膜进行退火热处理，得到所述的无铅压电薄膜材料；本发明通过在(Bi0.5Na0.5)TiO3基体中引入BaZrO3，构建了独特的准同型相界，即弛豫‑铁电相界；位于弛豫‑铁电相界的薄膜组分压电活性增强，在电场作用下产生可逆的场致相变效应，从而获得显著提高的应变性能，其应变及压电性能远超现有的铅基材料。
Lead-free piezoelectric film material and preparation method thereof
一种无铅压电薄膜材料及其制备方法
ZHAO JINYAN (author) / WANG ZHE (author) / REN WEI (author) / ZHENG KUN (author) / QUAN YI (author) / ZHUANG JIAN (author) / WANG LINGYAN (author)
2021-08-17
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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