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Compact high-dielectric barium-tantalum oxynitride ceramic and preparation method thereof
The invention discloses a compact high-dielectric barium-tantalum oxynitride ceramic and a preparation method thereof. The preparation method of the barium-tantalum oxynitride ceramic comprises the steps: mixing barium-tantalum oxynitride ceramic powder with ethyl alcohol to be uniform, carrying out drying and sieving after ball milling, obtaining pre-sintered powder, carrying out spark plasma sintering on the pre-sintered powder under the conditions of pressurization and protective atmosphere or pressurization and vacuum at the sintering temperature of 1200-1300 DEG C, cooling to obtain a ceramic primary sintered body, carrying out secondary sintering on the ceramic primary sintered body under the conditions of ammonia gas atmosphere and no mechanical pressure, and cooling to obtain the compact high-dielectric barium-tantalum oxynitride ceramic. The preparation method disclosed by the invention is relatively short in period, and the prepared compact high-dielectric barium-tantalum oxynitride ceramic is high in density, dielectric constant and purity and has a wide application prospect.
本发明公开了一种致密高介电钡钽氧氮化物陶瓷及其制备方法，钡钽氧氮化物陶瓷包括将钡钽氧氮化物陶瓷粉体与乙醇混合均匀，球磨后干燥并过筛，得到预烧结粉体，将预烧结粉体在加压、保护气氛条件下或者在加压、真空条件下进行放电等离子烧结，烧结温度为1200℃～1300℃，经冷却，得到陶瓷初烧结体，将陶瓷初烧结体在氨气气氛、无机械压力条件下进行二次烧结，降温冷却后，得到致密高介电钡钽氧氮化物陶瓷。本发明的制备方法周期较短，制得的致密高介电钡钽氧氮化物陶瓷致密度高、介电常数高、纯度高，有广泛的应用前景。
Compact high-dielectric barium-tantalum oxynitride ceramic and preparation method thereof
The invention discloses a compact high-dielectric barium-tantalum oxynitride ceramic and a preparation method thereof. The preparation method of the barium-tantalum oxynitride ceramic comprises the steps: mixing barium-tantalum oxynitride ceramic powder with ethyl alcohol to be uniform, carrying out drying and sieving after ball milling, obtaining pre-sintered powder, carrying out spark plasma sintering on the pre-sintered powder under the conditions of pressurization and protective atmosphere or pressurization and vacuum at the sintering temperature of 1200-1300 DEG C, cooling to obtain a ceramic primary sintered body, carrying out secondary sintering on the ceramic primary sintered body under the conditions of ammonia gas atmosphere and no mechanical pressure, and cooling to obtain the compact high-dielectric barium-tantalum oxynitride ceramic. The preparation method disclosed by the invention is relatively short in period, and the prepared compact high-dielectric barium-tantalum oxynitride ceramic is high in density, dielectric constant and purity and has a wide application prospect.
本发明公开了一种致密高介电钡钽氧氮化物陶瓷及其制备方法，钡钽氧氮化物陶瓷包括将钡钽氧氮化物陶瓷粉体与乙醇混合均匀，球磨后干燥并过筛，得到预烧结粉体，将预烧结粉体在加压、保护气氛条件下或者在加压、真空条件下进行放电等离子烧结，烧结温度为1200℃～1300℃，经冷却，得到陶瓷初烧结体，将陶瓷初烧结体在氨气气氛、无机械压力条件下进行二次烧结，降温冷却后，得到致密高介电钡钽氧氮化物陶瓷。本发明的制备方法周期较短，制得的致密高介电钡钽氧氮化物陶瓷致密度高、介电常数高、纯度高，有广泛的应用前景。
Compact high-dielectric barium-tantalum oxynitride ceramic and preparation method thereof
致密高介电钡钽氧氮化物陶瓷及其制备方法
LI DUAN (author) / LI JUNSHENG (author) / ZENG LIANG (author)
2021-09-14
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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