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Preparation process of FeSe1-xTex target material
The invention discloses a preparation process of a FeSe1-xTex target material, which comprises the following steps: during hot pressing sintering, pumping and washing a sintering furnace cavity with argon for three times, keeping the vacuum degree at 10 <-2 > Pa, applying a pressure intensity of 27 MPa to a powder blank in a mold, keeping the pressure intensity in the whole sintering process, heating to 400 DEG C for 30 minutes at the output power of 30%, then increasing the temperature to the target temperature of 400-700 DEG C within 30 min at the output power of 50%, and finally carrying out heat preservation for 12 h at the temperature of 400-700 DEG C. Compared with a target material prepared by an existing process, the compactness of the FeSe1-xTex target material prepared by the technical process is greatly improved, the compactness of the FeSe1-xTex target material can be continuously regulated and controlled by changing the sintering target temperature, and meanwhile, the prepared FeSe1-xTex target material is good in phase formation; the problems that a FeSe1-xTex target material prepared through an existing technology is not compact enough and is prone to pulverization after being bombarded by pulse laser for multiple times are solved. The preparation process is easy to industrialize, can be used for preparing 100m-level and kilom-level FeSe1-xTex long coated conductors, and has a good application prospect.
本发明公开了一种FeSe1‑xTex靶材的制备工艺，在热压烧结时，对烧结炉腔体以氩气抽洗三次，真空度保持在10‑2Pa，对模具中的粉胚施加27MPa的压强，在整个烧结过程中保持该压强，以30％的输出功率经由30min升温至400℃，再以50％的输出功率经由30min升温至目标温度400℃‑700℃，最终在400℃‑700℃保温12小时。本技术工艺制备的FeSe1‑xTex靶材相比于现有工艺所制备的靶材，其致密性得到了较大的提高，并且可以通过改变烧结目标温度连续调控FeSe1‑xTex靶材的致密性，同时制得的FeSe1‑xTex靶材成相好；解决了现有工艺制备的FeSe1‑xTex靶材不够致密，经脉冲激光多次轰击后易粉化的问题；本制备工艺易于实现工业化，可用于百米、千米级FeSe1‑xTex长带涂层导体的制备，具有良好的应用前景。
Preparation process of FeSe1-xTex target material
The invention discloses a preparation process of a FeSe1-xTex target material, which comprises the following steps: during hot pressing sintering, pumping and washing a sintering furnace cavity with argon for three times, keeping the vacuum degree at 10 <-2 > Pa, applying a pressure intensity of 27 MPa to a powder blank in a mold, keeping the pressure intensity in the whole sintering process, heating to 400 DEG C for 30 minutes at the output power of 30%, then increasing the temperature to the target temperature of 400-700 DEG C within 30 min at the output power of 50%, and finally carrying out heat preservation for 12 h at the temperature of 400-700 DEG C. Compared with a target material prepared by an existing process, the compactness of the FeSe1-xTex target material prepared by the technical process is greatly improved, the compactness of the FeSe1-xTex target material can be continuously regulated and controlled by changing the sintering target temperature, and meanwhile, the prepared FeSe1-xTex target material is good in phase formation; the problems that a FeSe1-xTex target material prepared through an existing technology is not compact enough and is prone to pulverization after being bombarded by pulse laser for multiple times are solved. The preparation process is easy to industrialize, can be used for preparing 100m-level and kilom-level FeSe1-xTex long coated conductors, and has a good application prospect.
本发明公开了一种FeSe1‑xTex靶材的制备工艺，在热压烧结时，对烧结炉腔体以氩气抽洗三次，真空度保持在10‑2Pa，对模具中的粉胚施加27MPa的压强，在整个烧结过程中保持该压强，以30％的输出功率经由30min升温至400℃，再以50％的输出功率经由30min升温至目标温度400℃‑700℃，最终在400℃‑700℃保温12小时。本技术工艺制备的FeSe1‑xTex靶材相比于现有工艺所制备的靶材，其致密性得到了较大的提高，并且可以通过改变烧结目标温度连续调控FeSe1‑xTex靶材的致密性，同时制得的FeSe1‑xTex靶材成相好；解决了现有工艺制备的FeSe1‑xTex靶材不够致密，经脉冲激光多次轰击后易粉化的问题；本制备工艺易于实现工业化，可用于百米、千米级FeSe1‑xTex长带涂层导体的制备，具有良好的应用前景。
Preparation process of FeSe1-xTex target material
一种FeSe1-xTex靶材的制备工艺
GE JUNYI (author) / ZHANG HANFANG (author) / JIANG WANYAN (author)
2021-09-17
Patent
Electronic Resource
Chinese
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