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Surface metallization method of microwave dielectric ceramic material, and microwave dielectric ceramic device
The invention belongs to the technical field of materials, and particularly relates to a surface metallization method of a microwave dielectric ceramic material, and a microwave dielectric ceramic device. The surface metallization method of the microwave dielectric ceramic material comprises the following steps: carrying out roughening treatment on the surface of the microwave dielectric ceramic material, and sequentially carrying out sensitization treatment and activation reduction treatment on the microwave dielectric ceramic material havingf been subjected to surface roughening; and placing the microwave dielectric ceramic material which is surface-deposited with precious metal elementary substances in a base metal plating solution for chemical plating, and then carrying out sintering treatment to obtain the microwave dielectric ceramic material with a base metallization layer formed on the surface. According to the surface treatment method, the consistency and uniformity of a surface metallization layer are improved, and the bonding compactness of the metallization layer and the surface of the ceramic material is improved. Moreover, the base metallization layer is adopted to replace a precious metal layer, so cost is reduced, and the situation that the conductivity of a product becomes poor due to electron migration of precious metal in a use environment is avoided.
本申请属于材料技术领域，尤其涉及一种微波介质陶瓷材料的表面金属化方法，以及一种微波介质陶瓷器件。其中，微波介质陶瓷材料的表面金属化方法，包括步骤：对微波介质陶瓷材料的表面进行粗化处理，对表面粗化的微波介质陶瓷材料依次进行敏化处理和活化还原处理；将表面沉积贵金属单质的微波介质陶瓷材料置于贱金属镀液中进行化学镀后，进行烧结处理，得到表面形成有贱金属化层的微波介质陶瓷材料。本申请表面处理方法提高了表面金属化层的一致性和均匀性，提高金属化层与陶瓷材料表面的结合紧密度。并且，采用贱金属化层代替贵金属化层，降低了成本，避免了贵金属在使用环境中发生电子迁移导致产品导电性变差。
Surface metallization method of microwave dielectric ceramic material, and microwave dielectric ceramic device
The invention belongs to the technical field of materials, and particularly relates to a surface metallization method of a microwave dielectric ceramic material, and a microwave dielectric ceramic device. The surface metallization method of the microwave dielectric ceramic material comprises the following steps: carrying out roughening treatment on the surface of the microwave dielectric ceramic material, and sequentially carrying out sensitization treatment and activation reduction treatment on the microwave dielectric ceramic material havingf been subjected to surface roughening; and placing the microwave dielectric ceramic material which is surface-deposited with precious metal elementary substances in a base metal plating solution for chemical plating, and then carrying out sintering treatment to obtain the microwave dielectric ceramic material with a base metallization layer formed on the surface. According to the surface treatment method, the consistency and uniformity of a surface metallization layer are improved, and the bonding compactness of the metallization layer and the surface of the ceramic material is improved. Moreover, the base metallization layer is adopted to replace a precious metal layer, so cost is reduced, and the situation that the conductivity of a product becomes poor due to electron migration of precious metal in a use environment is avoided.
本申请属于材料技术领域，尤其涉及一种微波介质陶瓷材料的表面金属化方法，以及一种微波介质陶瓷器件。其中，微波介质陶瓷材料的表面金属化方法，包括步骤：对微波介质陶瓷材料的表面进行粗化处理，对表面粗化的微波介质陶瓷材料依次进行敏化处理和活化还原处理；将表面沉积贵金属单质的微波介质陶瓷材料置于贱金属镀液中进行化学镀后，进行烧结处理，得到表面形成有贱金属化层的微波介质陶瓷材料。本申请表面处理方法提高了表面金属化层的一致性和均匀性，提高金属化层与陶瓷材料表面的结合紧密度。并且，采用贱金属化层代替贵金属化层，降低了成本，避免了贵金属在使用环境中发生电子迁移导致产品导电性变差。
Surface metallization method of microwave dielectric ceramic material, and microwave dielectric ceramic device
微波介质陶瓷材料的表面金属化方法、微波介质陶瓷器件
LU ZHENGWU (author) / YUAN LIANGLIANG (author) / LI YUE (author)
2022-02-11
Patent
Electronic Resource
Chinese
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