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Lead-free pulse dielectric energy storage composite ceramic material as well as preparation method and application thereof
The invention belongs to the technical field of electronic materials, and particularly relates to a lead-free pulse dielectric energy storage composite ceramic material and a preparation method and application thereof, and the chemical composition of the composite ceramic material is (1-x) (0.97 BaTiO3-0.03 NaNbO3)-xBi (Zn0. 5Zr0. 5) O3/AlN, wherein x is larger than or equal to 0.0 and smaller than or equal to 0.7, the mass percent of AlN in the ceramic material (1-x) (0.97 BaTiO3-0.03 NaNbO3)-xBi (Zn0. 5Zr0. 5) O3 is smaller than or equal to 10%, and AlN is nanoscale particles and is distributed in gaps among crystal grains in the ceramic material. According to the invention, the low-dielectric and wide-bandgap semiconductor material AlN is introduced into the lead-free pulse dielectric energy storage ceramic material and compounded in the lead-free energy storage composite ceramic material, so that the overall breakdown field strength is improved; the relaxation elements Bi ions, Zn ions and Zr ions are introduced into the lead-free pulse dielectric energy storage composite ceramic material, so that the relaxation degree of a material system is improved, the content of microscopic polar nanometer micro-regions is increased, and the energy storage efficiency and the temperature stability of the material are further improved.
本发明属于电子材料技术领域，具体涉及一种无铅脉冲电介质储能复合陶瓷材料及其制备方法和应用，复合陶瓷材料的化学组成为(1‑x)(0.97BaTiO3‑0.03NaNbO3)‑xBi(Zn0.5Zr0.5)O3/AlN；其中，0.0≤x≤0.7，AlN占陶瓷材料(1‑x)(0.97BaTiO3‑0.03NaNbO3)‑xBi(Zn0.5Zr0.5)O3的质量百分数小于等于10％，且AlN为纳米级颗粒，分布在陶瓷材料内部晶粒之间的空隙。本发明通过在无铅脉冲电介质储能陶瓷材料中引入低介电、宽禁带半导体材料AlN，复合在无铅储能复合陶瓷材料中，提高整体击穿场强；通过在无铅脉冲电介质储能复合陶瓷材料中引入弛豫元素Bi离子、Zn离子和Zr离子，提高材料体系的弛豫度，提高微观极性纳米微区的含量，进而提高材料的储能效率和温度稳定性。
Lead-free pulse dielectric energy storage composite ceramic material as well as preparation method and application thereof
The invention belongs to the technical field of electronic materials, and particularly relates to a lead-free pulse dielectric energy storage composite ceramic material and a preparation method and application thereof, and the chemical composition of the composite ceramic material is (1-x) (0.97 BaTiO3-0.03 NaNbO3)-xBi (Zn0. 5Zr0. 5) O3/AlN, wherein x is larger than or equal to 0.0 and smaller than or equal to 0.7, the mass percent of AlN in the ceramic material (1-x) (0.97 BaTiO3-0.03 NaNbO3)-xBi (Zn0. 5Zr0. 5) O3 is smaller than or equal to 10%, and AlN is nanoscale particles and is distributed in gaps among crystal grains in the ceramic material. According to the invention, the low-dielectric and wide-bandgap semiconductor material AlN is introduced into the lead-free pulse dielectric energy storage ceramic material and compounded in the lead-free energy storage composite ceramic material, so that the overall breakdown field strength is improved; the relaxation elements Bi ions, Zn ions and Zr ions are introduced into the lead-free pulse dielectric energy storage composite ceramic material, so that the relaxation degree of a material system is improved, the content of microscopic polar nanometer micro-regions is increased, and the energy storage efficiency and the temperature stability of the material are further improved.
本发明属于电子材料技术领域，具体涉及一种无铅脉冲电介质储能复合陶瓷材料及其制备方法和应用，复合陶瓷材料的化学组成为(1‑x)(0.97BaTiO3‑0.03NaNbO3)‑xBi(Zn0.5Zr0.5)O3/AlN；其中，0.0≤x≤0.7，AlN占陶瓷材料(1‑x)(0.97BaTiO3‑0.03NaNbO3)‑xBi(Zn0.5Zr0.5)O3的质量百分数小于等于10％，且AlN为纳米级颗粒，分布在陶瓷材料内部晶粒之间的空隙。本发明通过在无铅脉冲电介质储能陶瓷材料中引入低介电、宽禁带半导体材料AlN，复合在无铅储能复合陶瓷材料中，提高整体击穿场强；通过在无铅脉冲电介质储能复合陶瓷材料中引入弛豫元素Bi离子、Zn离子和Zr离子，提高材料体系的弛豫度，提高微观极性纳米微区的含量，进而提高材料的储能效率和温度稳定性。
Lead-free pulse dielectric energy storage composite ceramic material as well as preparation method and application thereof
无铅脉冲电介质储能复合陶瓷材料及其制备方法和应用
ZHANG GUANGZU (author) / XIAO WENRONG (author) / ZHANG CHAO (author) / DOU ZHANMING (author) / JIANG SHENGLIN (author)
2022-03-11
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
| European Patent Office | 2015
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