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Low-dielectric low-loss Ba-Si-B-M-based LTCC material and preparation method thereof
The invention belongs to the field of electronic information ceramics and manufacturing thereof, and particularly relates to a low-dielectric low-loss Ba-Si-B-M-based LTCC (Low Temperature Co-Fired Ceramic) material and a preparation method thereof. The compact Ba-Si-B-M-based microwave ceramic material is sintered and molded at the low temperature of 850-950 DEG C by adjusting the formula of the Ba-Si-based ceramic raw materials and adopting a solid phase method by fully utilizing the characteristic that the lattice energy of Si-O bonds is high due to the fact that Si < 4 + > ions are low in polarizability and the covalent bonding property of the Si-O bonds in the complex chemical bond theory. A eutectic compound is formed in the sintering process, so that grain rearrangement is promoted, and BaSi2O5 phase ceramic is separated out along with sintering; the low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low
本发明属于电子信息陶瓷及其制造领域，具体涉及一种低介低损Ba‑Si‑B‑M基LTCC材料及其制备方法。本发明充分利用了复杂化学键理论由于Si4+离子极化率低和Si‑O键的共价键性高，所以Si‑O键的晶格能高这一特性，通过调整Ba‑Si基陶瓷原料配方，采用固相法，在850℃～950℃的低温下烧结成型致密的Ba‑Si‑B‑M基微波陶瓷材料。在烧结过程中形成低共熔化合物，从而推动晶粒重排，并且随着烧结的进行析出BaSi2O5相的陶瓷；并且没有二次相，确保了陶瓷材料的介电性能和机械性能优异，具有高Q×f值，6～7.5的低介电常数，介电损耗低至6.13×10‑4，可在LTCC中推广应用。
Low-dielectric low-loss Ba-Si-B-M-based LTCC material and preparation method thereof
The invention belongs to the field of electronic information ceramics and manufacturing thereof, and particularly relates to a low-dielectric low-loss Ba-Si-B-M-based LTCC (Low Temperature Co-Fired Ceramic) material and a preparation method thereof. The compact Ba-Si-B-M-based microwave ceramic material is sintered and molded at the low temperature of 850-950 DEG C by adjusting the formula of the Ba-Si-based ceramic raw materials and adopting a solid phase method by fully utilizing the characteristic that the lattice energy of Si-O bonds is high due to the fact that Si < 4 + > ions are low in polarizability and the covalent bonding property of the Si-O bonds in the complex chemical bond theory. A eutectic compound is formed in the sintering process, so that grain rearrangement is promoted, and BaSi2O5 phase ceramic is separated out along with sintering; the low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low
本发明属于电子信息陶瓷及其制造领域，具体涉及一种低介低损Ba‑Si‑B‑M基LTCC材料及其制备方法。本发明充分利用了复杂化学键理论由于Si4+离子极化率低和Si‑O键的共价键性高，所以Si‑O键的晶格能高这一特性，通过调整Ba‑Si基陶瓷原料配方，采用固相法，在850℃～950℃的低温下烧结成型致密的Ba‑Si‑B‑M基微波陶瓷材料。在烧结过程中形成低共熔化合物，从而推动晶粒重排，并且随着烧结的进行析出BaSi2O5相的陶瓷；并且没有二次相，确保了陶瓷材料的介电性能和机械性能优异，具有高Q×f值，6～7.5的低介电常数，介电损耗低至6.13×10‑4，可在LTCC中推广应用。
Low-dielectric low-loss Ba-Si-B-M-based LTCC material and preparation method thereof
一种低介低损Ba-Si-B-M基LTCC材料及其制备方法
LI ENZHU (author) / WU PEI (author) / YANG HONGCHENG (author) / ZHONG CHAOWEI (author) / ZHANG SHUREN (author) / SUN CHENGLI (author)
2022-04-29
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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