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Silicon-germanium-based low-dielectric microwave dielectric ceramic and preparation method thereof
The invention belongs to the technical field of low-dielectric microwave dielectric ceramics, and particularly relates to a silicon-germanium-based low-dielectric microwave dielectric ceramic and a preparation method thereof. The preparation method comprises the following steps: preparing a precursor with a chemical general formula of xBaO-MO2-3NO2 (M = SnyZrzHfk; n is equal to Si < 1-1 > Gel; y + z + k = 1; 0 lt; x is less than or equal to 1.0; 0 < = y < = 1.0; 0 < = z < = 1.0; 0 < = k < = 1.0; 0 < = l < = 1.0) is used for preparing a microwave dielectric ceramic material. The ceramic has a low dielectric constant (epsilon r = 6.6-9.5), an excellent quality factor (Q * f = 7977-36100GHz) and a wide sintering temperature range (1200-1450 DEG C), and meanwhile, the microwave dielectric ceramic has a negative temperature coefficient of resonance frequency (tau f is more than or equal to-37.8 ppm/DEG C and less than or equal to-22.8 ppm/DEG C). Due to the low sintering temperature, the low dielectric constant and the excellent quality factor of the microwave dielectric ceramic, the low-dielectric microwave dielectric material can be used as a raw material of components such as a dielectric substrate, a dielectric resonator and a dielectric filter.
本发明属于低介微波介质陶瓷技术领域，更具体地，涉及一种硅锗基低介微波介质陶瓷及其制备方法。将化学通式为xBaO‑MO2‑3NO2(M＝SnyZrzHfk；N＝Si1‑lGel；y+z+k＝1；0
Silicon-germanium-based low-dielectric microwave dielectric ceramic and preparation method thereof
The invention belongs to the technical field of low-dielectric microwave dielectric ceramics, and particularly relates to a silicon-germanium-based low-dielectric microwave dielectric ceramic and a preparation method thereof. The preparation method comprises the following steps: preparing a precursor with a chemical general formula of xBaO-MO2-3NO2 (M = SnyZrzHfk; n is equal to Si < 1-1 > Gel; y + z + k = 1; 0 lt; x is less than or equal to 1.0; 0 < = y < = 1.0; 0 < = z < = 1.0; 0 < = k < = 1.0; 0 < = l < = 1.0) is used for preparing a microwave dielectric ceramic material. The ceramic has a low dielectric constant (epsilon r = 6.6-9.5), an excellent quality factor (Q * f = 7977-36100GHz) and a wide sintering temperature range (1200-1450 DEG C), and meanwhile, the microwave dielectric ceramic has a negative temperature coefficient of resonance frequency (tau f is more than or equal to-37.8 ppm/DEG C and less than or equal to-22.8 ppm/DEG C). Due to the low sintering temperature, the low dielectric constant and the excellent quality factor of the microwave dielectric ceramic, the low-dielectric microwave dielectric material can be used as a raw material of components such as a dielectric substrate, a dielectric resonator and a dielectric filter.
本发明属于低介微波介质陶瓷技术领域，更具体地，涉及一种硅锗基低介微波介质陶瓷及其制备方法。将化学通式为xBaO‑MO2‑3NO2(M＝SnyZrzHfk；N＝Si1‑lGel；y+z+k＝1；0
Silicon-germanium-based low-dielectric microwave dielectric ceramic and preparation method thereof
一种硅锗基低介微波介质陶瓷及其制备方法
LEI WEN (author) / DU KANG (author) / LYU WENZHONG (author) / SONG XIAOQIANG (author) / FU MING (author) / WANG XIAOCHUAN (author)
2022-06-17
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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