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The invention discloses a high-dielectric-constant ceramic for high-entropy design at B site and a preparation method thereof, and belongs to the technical field of high-entropy ceramic materials. The chemical formula of the high-entropy ceramic material is Pb (Zr0. 25Ti0. 25Sn0. 25Hf0. 25) O3, and the preparation process comprises the following steps: respectively weighing PbO, TiO2, ZrO2, SnO2 and HfO2 according to a designed stoichiometric ratio, then carrying out wet ball milling, drying, grinding and calcining, carrying out secondary ball milling, drying, grinding and compression molding on the obtained calcined powder, and finally sintering in the air at the temperature of 1200-1300 DEG C to obtain the compact Pb (Zr0. 25Ti0. 25Sn0. 25Hf0. 25) O3 high-entropy ceramic. The Pb (Zr < 0.25 > Ti < 0.25 > Sn < 0.25 > Hf < 0.25 >) O3 high-entropy ceramic has a dielectric constant of up to 18500 at a temperature of about 270 DEG C under a frequency test of 1kHz; the Pb (Zr < 0.25 > Ti < 0.25 > Sn < 0.25 > Hf < 0.25 >) O3 high-entropy ceramic is expected to become a ceramic capacitor material with a high dielectric constant.
本发明公开了一种在B位进行高熵化设计的高介电常数陶瓷及其制备方法，属于高熵陶瓷材料技术领域。本发明所述高熵陶瓷材料的化学式为Pb(Zr0.25Ti0.25Sn0.25Hf0.25)O3，制备过程为按照设计的化学计量比分别称量PbO、TiO2、ZrO2、SnO2、HfO2，之后进行湿法球磨、干燥、研磨、煅烧，对所得煅烧粉末进行二次球磨、干燥、研磨、压制成型，最后在空气中1200~1300℃温度下烧结得到致密的Pb(Zr0.25Ti0.25Sn0.25Hf0.25)O3高熵陶瓷。Pb(Zr0.25Ti0.25Sn0.25Hf0.25)O3高熵陶瓷在1kHz频率测试下，在270℃左右的温度下介电常数高达18500；Pb(Zr0.25Ti0.25Sn0.25Hf0.25)O3高熵陶瓷有望成为高介电常数的陶瓷电容器材料。
The invention discloses a high-dielectric-constant ceramic for high-entropy design at B site and a preparation method thereof, and belongs to the technical field of high-entropy ceramic materials. The chemical formula of the high-entropy ceramic material is Pb (Zr0. 25Ti0. 25Sn0. 25Hf0. 25) O3, and the preparation process comprises the following steps: respectively weighing PbO, TiO2, ZrO2, SnO2 and HfO2 according to a designed stoichiometric ratio, then carrying out wet ball milling, drying, grinding and calcining, carrying out secondary ball milling, drying, grinding and compression molding on the obtained calcined powder, and finally sintering in the air at the temperature of 1200-1300 DEG C to obtain the compact Pb (Zr0. 25Ti0. 25Sn0. 25Hf0. 25) O3 high-entropy ceramic. The Pb (Zr < 0.25 > Ti < 0.25 > Sn < 0.25 > Hf < 0.25 >) O3 high-entropy ceramic has a dielectric constant of up to 18500 at a temperature of about 270 DEG C under a frequency test of 1kHz; the Pb (Zr < 0.25 > Ti < 0.25 > Sn < 0.25 > Hf < 0.25 >) O3 high-entropy ceramic is expected to become a ceramic capacitor material with a high dielectric constant.
本发明公开了一种在B位进行高熵化设计的高介电常数陶瓷及其制备方法，属于高熵陶瓷材料技术领域。本发明所述高熵陶瓷材料的化学式为Pb(Zr0.25Ti0.25Sn0.25Hf0.25)O3，制备过程为按照设计的化学计量比分别称量PbO、TiO2、ZrO2、SnO2、HfO2，之后进行湿法球磨、干燥、研磨、煅烧，对所得煅烧粉末进行二次球磨、干燥、研磨、压制成型，最后在空气中1200~1300℃温度下烧结得到致密的Pb(Zr0.25Ti0.25Sn0.25Hf0.25)O3高熵陶瓷。Pb(Zr0.25Ti0.25Sn0.25Hf0.25)O3高熵陶瓷在1kHz频率测试下，在270℃左右的温度下介电常数高达18500；Pb(Zr0.25Ti0.25Sn0.25Hf0.25)O3高熵陶瓷有望成为高介电常数的陶瓷电容器材料。
High-dielectric-constant ceramic with high entropy design at B bit and preparation method of high-dielectric-constant ceramic
一种在B位进行高熵化设计的高介电常数陶瓷及其制备方法
2022-12-02
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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