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Preparation method of C-SiC double-coating carbon/carbon composite material crucible
The invention relates to a preparation method of a C-SiC double-coating carbon/carbon composite material crucible. Comprising the following steps: S1, preparing a pyrolytic carbon coating; s2, preparing coating slurry; s3, brushing of the coating slurry; and S4, the SiC coating is prepared through gas-phase siliconizing. The pyrolytic carbon coating is prepared on the surface of the carbon/carbon composite material crucible through CVD, the uniform carbon layer is prepared on the surface of the crucible in a slurry brushing mode, and the carbon layer with the surface brushed reacts to generate the SiC layer in combination with gas-phase siliconizing. All open pores in the surface of the crucible are closed through preparation of the first pyrolytic carbon coating, the erosion influence of gas phase silicon on a base material during gas phase siliconizing can be effectively prevented, reaction raw materials for generating SiC are provided for the gas phase silicon through preparation of the second coating carbon coating, and a compact SiC coating can be generated on the surface. According to the method, it is guaranteed that a compact SiC coating is generated on the surface of the crucible, the service life of the material is prolonged, and the erosion influence of Si steam on a base material in the reaction process of Si and C is also prevented.
本发明涉及一种C‑SiC双涂层炭/炭复合材料坩埚的制备方法。包括:S1热解碳涂层的制备;S2涂层浆料的制备;S3涂层浆料的涂刷;S4气相渗硅制备SiC涂层。本发明通过在炭/炭复合材料坩埚的表面CVD制备热解碳涂层,采用浆料涂刷的方式,在坩埚表面制备均匀炭层,结合气相渗硅将表面涂刷的炭层反应生成SiC层。第一层热解碳涂层的制备将坩埚表面所有的开气孔闭合,可有效防止气相渗硅时气相硅对基体材料的侵蚀影响,第二层涂刷炭层的制备为气相硅提供了生成SiC的反应原材料,可在表面生成致密的SiC涂层。本发明既保证了坩埚表面生成致密的SiC涂层,提高材料的使用寿命,也防止了Si和C在反应过程中Si蒸汽对基体材料的侵蚀影响。
Preparation method of C-SiC double-coating carbon/carbon composite material crucible
The invention relates to a preparation method of a C-SiC double-coating carbon/carbon composite material crucible. Comprising the following steps: S1, preparing a pyrolytic carbon coating; s2, preparing coating slurry; s3, brushing of the coating slurry; and S4, the SiC coating is prepared through gas-phase siliconizing. The pyrolytic carbon coating is prepared on the surface of the carbon/carbon composite material crucible through CVD, the uniform carbon layer is prepared on the surface of the crucible in a slurry brushing mode, and the carbon layer with the surface brushed reacts to generate the SiC layer in combination with gas-phase siliconizing. All open pores in the surface of the crucible are closed through preparation of the first pyrolytic carbon coating, the erosion influence of gas phase silicon on a base material during gas phase siliconizing can be effectively prevented, reaction raw materials for generating SiC are provided for the gas phase silicon through preparation of the second coating carbon coating, and a compact SiC coating can be generated on the surface. According to the method, it is guaranteed that a compact SiC coating is generated on the surface of the crucible, the service life of the material is prolonged, and the erosion influence of Si steam on a base material in the reaction process of Si and C is also prevented.
本发明涉及一种C‑SiC双涂层炭/炭复合材料坩埚的制备方法。包括:S1热解碳涂层的制备;S2涂层浆料的制备;S3涂层浆料的涂刷;S4气相渗硅制备SiC涂层。本发明通过在炭/炭复合材料坩埚的表面CVD制备热解碳涂层,采用浆料涂刷的方式,在坩埚表面制备均匀炭层,结合气相渗硅将表面涂刷的炭层反应生成SiC层。第一层热解碳涂层的制备将坩埚表面所有的开气孔闭合,可有效防止气相渗硅时气相硅对基体材料的侵蚀影响,第二层涂刷炭层的制备为气相硅提供了生成SiC的反应原材料,可在表面生成致密的SiC涂层。本发明既保证了坩埚表面生成致密的SiC涂层,提高材料的使用寿命,也防止了Si和C在反应过程中Si蒸汽对基体材料的侵蚀影响。
Preparation method of C-SiC double-coating carbon/carbon composite material crucible
一种C-SiC双涂层炭/炭复合材料坩埚的制备方法
ZHU WENZHI (author) / HE LIUYANG (author)
2022-12-30
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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