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SiCnw/Si3N4 composite ceramic wave-absorbing material and preparation method thereof
The invention relates to a SiCnw/Si3N4 composite ceramic wave-absorbing material and a preparation method thereof. The SiCnw/Si3N4 multiphase ceramic wave-absorbing material is characterized by comprising a porous silicon nitride substrate and a SiC nanowire which grows in situ in a mesoporous structure of the porous silicon nitride substrate, the SiC nanowires account for 2-25 wt% of the mass of the porous silicon nitride substrate, and preferably 5-15 wt% of the mass of the porous silicon nitride substrate.
本发明涉及一种SiCnw/Si3N4复相陶瓷吸波材料及其制备方法。所述SiCnw/Si3N4复相陶瓷吸波材料，其特征在在于，包括：多孔氮化硅基体，以及原位生长在多孔氮化硅基体中孔结构的SiC纳米线；所述SiC纳米线占多孔氮化硅基体质量的2～25wt％，优选为5～15wt％。
SiCnw/Si3N4 composite ceramic wave-absorbing material and preparation method thereof
The invention relates to a SiCnw/Si3N4 composite ceramic wave-absorbing material and a preparation method thereof. The SiCnw/Si3N4 multiphase ceramic wave-absorbing material is characterized by comprising a porous silicon nitride substrate and a SiC nanowire which grows in situ in a mesoporous structure of the porous silicon nitride substrate, the SiC nanowires account for 2-25 wt% of the mass of the porous silicon nitride substrate, and preferably 5-15 wt% of the mass of the porous silicon nitride substrate.
本发明涉及一种SiCnw/Si3N4复相陶瓷吸波材料及其制备方法。所述SiCnw/Si3N4复相陶瓷吸波材料，其特征在在于，包括：多孔氮化硅基体，以及原位生长在多孔氮化硅基体中孔结构的SiC纳米线；所述SiC纳米线占多孔氮化硅基体质量的2～25wt％，优选为5～15wt％。
SiCnw/Si3N4 composite ceramic wave-absorbing material and preparation method thereof
一种SiCnw/Si3N4复相陶瓷吸波材料及其制备方法
YAO XIUMIN (author) / BAI JIALIN (author) / LIU XUEJIAN (author) / HUANG SHIJIE (author) / HUANG ZHENGREN (author)
2023-03-07
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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