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Low-temperature sintered oxyfluoride microwave dielectric ceramic with high Q*f value and preparation method thereof
The invention discloses a low-temperature sintered oxyfluoride microwave dielectric ceramic with a high Q * f value and a preparation method thereof, the phase of the ceramic material comprises two phases of a LiNbO4F type cubic structure and an MgO type cubic structure, the content of the LiNbO4F type cubic structure phase is 56.1 wt%-63.4 wt%, and the balance is the MgO type cubic structure phase. According to the low-temperature sintered oxyfluoride microwave dielectric ceramic with the high Q * f value, the defect that low-temperature sintering and high Q * f value of Li4Mg4NbO8 ceramic are difficult to consider at the same time is overcome, meanwhile, low-temperature sintering and good microwave dielectric properties are achieved, Q * f ranges from 99700 GHz to 106700 GHz, the range of epsilon r ranges from 12.8 to 13.2, and the temperature coefficient of resonance frequency tau f ranges from-36.0 ppm/DEG C to-43.0 ppm/DEG C. The ceramic material is rich in raw materials, low in cost and beneficial to industrial production, and can be widely applied to manufacturing of low-temperature co-fired ceramic systems, multi-layer dielectric resonators, microwave substrates and other electronic components.
本发明公开了一种低温烧结高Q×f值氟氧化物微波介质陶瓷及制备方法，该陶瓷材料的物相包括LiNbO4F型立方结构和MgO型立方结构两种物相所组成，其中LiNbO4F型立方结构相含量为56.1wt％～63.4wt％，其余为MgO型立方结构相。本发明低温烧结高Q×f值氟氧化物微波介质陶瓷克服了Li4Mg4NbO8陶瓷低温烧结与高Q×f值难以兼顾的缺点，同时兼具低温烧结和良好微波介电性能，Q×f为99700～106700GHz，εr范围为12.8～13.2，谐振频率温度系数τf为‑36.0～‑43.0ppm/℃。制备本发明陶瓷材料所用原料丰富、成本低廉，有利于工业化生产，可广泛应用于低温共烧陶瓷系统、多层介质谐振器、微波基板等电子元器件的制造。
Low-temperature sintered oxyfluoride microwave dielectric ceramic with high Q*f value and preparation method thereof
The invention discloses a low-temperature sintered oxyfluoride microwave dielectric ceramic with a high Q * f value and a preparation method thereof, the phase of the ceramic material comprises two phases of a LiNbO4F type cubic structure and an MgO type cubic structure, the content of the LiNbO4F type cubic structure phase is 56.1 wt%-63.4 wt%, and the balance is the MgO type cubic structure phase. According to the low-temperature sintered oxyfluoride microwave dielectric ceramic with the high Q * f value, the defect that low-temperature sintering and high Q * f value of Li4Mg4NbO8 ceramic are difficult to consider at the same time is overcome, meanwhile, low-temperature sintering and good microwave dielectric properties are achieved, Q * f ranges from 99700 GHz to 106700 GHz, the range of epsilon r ranges from 12.8 to 13.2, and the temperature coefficient of resonance frequency tau f ranges from-36.0 ppm/DEG C to-43.0 ppm/DEG C. The ceramic material is rich in raw materials, low in cost and beneficial to industrial production, and can be widely applied to manufacturing of low-temperature co-fired ceramic systems, multi-layer dielectric resonators, microwave substrates and other electronic components.
本发明公开了一种低温烧结高Q×f值氟氧化物微波介质陶瓷及制备方法，该陶瓷材料的物相包括LiNbO4F型立方结构和MgO型立方结构两种物相所组成，其中LiNbO4F型立方结构相含量为56.1wt％～63.4wt％，其余为MgO型立方结构相。本发明低温烧结高Q×f值氟氧化物微波介质陶瓷克服了Li4Mg4NbO8陶瓷低温烧结与高Q×f值难以兼顾的缺点，同时兼具低温烧结和良好微波介电性能，Q×f为99700～106700GHz，εr范围为12.8～13.2，谐振频率温度系数τf为‑36.0～‑43.0ppm/℃。制备本发明陶瓷材料所用原料丰富、成本低廉，有利于工业化生产，可广泛应用于低温共烧陶瓷系统、多层介质谐振器、微波基板等电子元器件的制造。
Low-temperature sintered oxyfluoride microwave dielectric ceramic with high Q*f value and preparation method thereof
一种低温烧结高Q×f值氟氧化物微波介质陶瓷及其制备方法
PEI CUIJIN (author) / WANG ZHEN (author) / YAO GUOGUANG (author) / DING QIAN (author) / CHEN MIAO (author) / YANG YANHAN (author) / WU PENGSHEN (author)
2023-04-04
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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