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The present invention provides a silicon nitride powder production process, and relates to the technical field of silicon nitride, and the silicon nitride powder production process comprises the following steps: 1, carrying out wet milling on a primary crystalline silicon block in a ball mill, and using alcohol as a grinding medium to obtain a slurry; 2, the slurry is dried into powder, and the powder is screened; 3, the powder is subjected to static pressure treatment, and the powder is pressed into a blank; 4, the blank is put into a nitriding furnace for pre-nitriding; in the nitridation treatment process, pre-nitridation is firstly carried out, then nitridation heat preservation is carried out at 1250 DEG C, nitrogen, hydrogen and argon are introduced in a matched mode until interlaced silicon nitride single crystal grains are generated on the surfaces of silicon particles and pores are filled, nitridation is carried out at 1350-1400 DEG C, silicon nitride of an originally formed network structure continues to grow and grow and is compact, and verification is passed, so that the performance of the silicon nitride is improved, and the performance of the silicon nitride is improved. The prepared silicon nitride powder product is small in volume density and high in porosity, the strength is reduced, and preparation of products with complex shapes is facilitated.
本发明提供了一种氮化硅粉料制作工艺,涉及氮化硅技术领域,包括以下步骤:步骤一:用一级结晶硅块在球磨机中湿磨,用酒精作研磨介质,获得浆料;步骤二:对浆料进行烘干,烘干成粉料,并对粉料进行筛选;步骤三:对粉料进行静压处理,将粉料压制成胚体;步骤四:将胚体投入氮化炉中进行预氮化;本发明在氮化处理过程中,先进行预氮化,然后在1250℃氮化保温,配合氮气、氢气和氩气的通入,直至硅颗粒表面生成交织状的氮化硅单晶晶粒,填满孔隙,接着在在1350‑1400℃下进行氮化,使原来形成的网络结构的氮化硅继续发育长大、致密,通过验证,制备的氮化硅粉料制品体积密度小,气孔率高,削减了强度,有利于制备形状复杂的制品。
The present invention provides a silicon nitride powder production process, and relates to the technical field of silicon nitride, and the silicon nitride powder production process comprises the following steps: 1, carrying out wet milling on a primary crystalline silicon block in a ball mill, and using alcohol as a grinding medium to obtain a slurry; 2, the slurry is dried into powder, and the powder is screened; 3, the powder is subjected to static pressure treatment, and the powder is pressed into a blank; 4, the blank is put into a nitriding furnace for pre-nitriding; in the nitridation treatment process, pre-nitridation is firstly carried out, then nitridation heat preservation is carried out at 1250 DEG C, nitrogen, hydrogen and argon are introduced in a matched mode until interlaced silicon nitride single crystal grains are generated on the surfaces of silicon particles and pores are filled, nitridation is carried out at 1350-1400 DEG C, silicon nitride of an originally formed network structure continues to grow and grow and is compact, and verification is passed, so that the performance of the silicon nitride is improved, and the performance of the silicon nitride is improved. The prepared silicon nitride powder product is small in volume density and high in porosity, the strength is reduced, and preparation of products with complex shapes is facilitated.
本发明提供了一种氮化硅粉料制作工艺,涉及氮化硅技术领域,包括以下步骤:步骤一:用一级结晶硅块在球磨机中湿磨,用酒精作研磨介质,获得浆料;步骤二:对浆料进行烘干,烘干成粉料,并对粉料进行筛选;步骤三:对粉料进行静压处理,将粉料压制成胚体;步骤四:将胚体投入氮化炉中进行预氮化;本发明在氮化处理过程中,先进行预氮化,然后在1250℃氮化保温,配合氮气、氢气和氩气的通入,直至硅颗粒表面生成交织状的氮化硅单晶晶粒,填满孔隙,接着在在1350‑1400℃下进行氮化,使原来形成的网络结构的氮化硅继续发育长大、致密,通过验证,制备的氮化硅粉料制品体积密度小,气孔率高,削减了强度,有利于制备形状复杂的制品。
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