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Indium-containing ternary layered carbide ceramic and preparation method thereof
The invention discloses an indium-containing ternary layered carbide ceramic and a preparation method thereof, the chemical formula of the ceramic is Zr3InC2 and Hf3InC2, and the ceramic is a nanometer layered structure ternary layered carbide ceramic containing an indium element; the preparation method comprises the following steps: mixing Zr/Hf powder, In powder and C powder according to a molar ratio of 3: (1.3-1.5): 2 under the protection of argon to obtain mixed powder; and heating the mixed powder to 1300-1450 DEG C, then cooling, and grinding off a surface carbonization layer to obtain the sample. According to the invention, Zr3InC2 and Hf3InC2 are proposed and successfully synthesized for the first time; a brand new thought is provided for designing high-temperature ceramic photoelectric materials, and the application range of the indium element in the field of high-temperature-resistant photoelectric materials is widened.
本发明公开了一种含铟三元层状碳化物陶瓷及其制备方法，陶瓷的化学式为Zr3InC2和Hf3InC2，是含铟元素的纳米层状结构三元层状碳化物陶瓷；制备方法为：将Zr/Hf粉、In粉和C粉按摩尔比3：(1.3～1.5)：2在氩气保护下混合，得混合粉体；将混合粉体升温至1300～1450℃，其后冷却、磨去表面碳化层，即得样品。本发明首次提出并成功合成Zr3InC2和Hf3InC2；为设计高温陶瓷光电材料提供了全新思路，拓宽了铟元素在耐高温光电材料领域的应用范围。
Indium-containing ternary layered carbide ceramic and preparation method thereof
The invention discloses an indium-containing ternary layered carbide ceramic and a preparation method thereof, the chemical formula of the ceramic is Zr3InC2 and Hf3InC2, and the ceramic is a nanometer layered structure ternary layered carbide ceramic containing an indium element; the preparation method comprises the following steps: mixing Zr/Hf powder, In powder and C powder according to a molar ratio of 3: (1.3-1.5): 2 under the protection of argon to obtain mixed powder; and heating the mixed powder to 1300-1450 DEG C, then cooling, and grinding off a surface carbonization layer to obtain the sample. According to the invention, Zr3InC2 and Hf3InC2 are proposed and successfully synthesized for the first time; a brand new thought is provided for designing high-temperature ceramic photoelectric materials, and the application range of the indium element in the field of high-temperature-resistant photoelectric materials is widened.
本发明公开了一种含铟三元层状碳化物陶瓷及其制备方法，陶瓷的化学式为Zr3InC2和Hf3InC2，是含铟元素的纳米层状结构三元层状碳化物陶瓷；制备方法为：将Zr/Hf粉、In粉和C粉按摩尔比3：(1.3～1.5)：2在氩气保护下混合，得混合粉体；将混合粉体升温至1300～1450℃，其后冷却、磨去表面碳化层，即得样品。本发明首次提出并成功合成Zr3InC2和Hf3InC2；为设计高温陶瓷光电材料提供了全新思路，拓宽了铟元素在耐高温光电材料领域的应用范围。
Indium-containing ternary layered carbide ceramic and preparation method thereof
一种含铟三元层状碳化物陶瓷及其制备方法
HU CHUNFENG (author) / LUO JIA (author) / ZHANG QIQIANG (author) / WEN BO (author)
2023-06-06
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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