A platform for research: civil engineering, architecture and urbanism
Preparation method of SiC/MoSi2 sample loading plate
The invention belongs to a high-temperature testing instrument, and relates to a SiC/MoSi2 composite material sample loading plate for a high-temperature breaking strength test of a refractory material. The sample loading plate takes silicon carbide particles, silicon carbide fine powder and silicon carbide micro powder as main raw materials, a small amount of silicon powder is added, an organic binding agent is added, a qualified green body is obtained through semi-dry method forming, after drying, heat preservation is conducted for 2-10 h under the protective atmosphere at the temperature of 750-900 DEG C, coke discharging is conducted, and a silicon carbide prefabricated body is obtained. And embedding MoSi2 micro powder around the silicon carbide preform, and carrying out infiltration sintering in a protective atmosphere to obtain the SiC/MoSi2 sample loading plate. Compared with silicon nitride combined silicon carbide and recrystallized silicon carbide materials adopted by a traditional sample loading plate, the MoSi2 component in the SiC/MoSi2 sample loading plate obtained through the method can show metal shaping in the service process, cracks generated by the silicon carbide material can be made up, the strength and stability of the material can be maintained more easily, and therefore the longer service time can be obtained.
本发明属于高温测试仪器,涉及耐火材料高温抗折强度试验用SiC/MoSi2复合材料载样板。该载样板以以碳化硅颗粒、碳化硅细粉、碳化硅微粉为主要原料,添加少量硅粉,加入有机结合剂,采用半干法成型得到合格坯体,烘干后在保护气氛下750‑900℃保温2~10h排焦,得到碳化硅预制体。将碳化硅预制体周围填埋MoSi2微粉,在保护气氛中进行熔渗烧结得到SiC/MoSi2载样板。与传统载样板采用的氮化硅结合碳化硅、重结晶碳化硅材质相比,通过本方法所得的SiC/MoSi2载样板中MoSi2组分在服役过程中可以展示出金属的塑形,弥补碳化硅材料产生的裂纹,更容易维持材料的强度及稳定性,从而获得更长的服役时间。
Preparation method of SiC/MoSi2 sample loading plate
The invention belongs to a high-temperature testing instrument, and relates to a SiC/MoSi2 composite material sample loading plate for a high-temperature breaking strength test of a refractory material. The sample loading plate takes silicon carbide particles, silicon carbide fine powder and silicon carbide micro powder as main raw materials, a small amount of silicon powder is added, an organic binding agent is added, a qualified green body is obtained through semi-dry method forming, after drying, heat preservation is conducted for 2-10 h under the protective atmosphere at the temperature of 750-900 DEG C, coke discharging is conducted, and a silicon carbide prefabricated body is obtained. And embedding MoSi2 micro powder around the silicon carbide preform, and carrying out infiltration sintering in a protective atmosphere to obtain the SiC/MoSi2 sample loading plate. Compared with silicon nitride combined silicon carbide and recrystallized silicon carbide materials adopted by a traditional sample loading plate, the MoSi2 component in the SiC/MoSi2 sample loading plate obtained through the method can show metal shaping in the service process, cracks generated by the silicon carbide material can be made up, the strength and stability of the material can be maintained more easily, and therefore the longer service time can be obtained.
本发明属于高温测试仪器,涉及耐火材料高温抗折强度试验用SiC/MoSi2复合材料载样板。该载样板以以碳化硅颗粒、碳化硅细粉、碳化硅微粉为主要原料,添加少量硅粉,加入有机结合剂,采用半干法成型得到合格坯体,烘干后在保护气氛下750‑900℃保温2~10h排焦,得到碳化硅预制体。将碳化硅预制体周围填埋MoSi2微粉,在保护气氛中进行熔渗烧结得到SiC/MoSi2载样板。与传统载样板采用的氮化硅结合碳化硅、重结晶碳化硅材质相比,通过本方法所得的SiC/MoSi2载样板中MoSi2组分在服役过程中可以展示出金属的塑形,弥补碳化硅材料产生的裂纹,更容易维持材料的强度及稳定性,从而获得更长的服役时间。
Preparation method of SiC/MoSi2 sample loading plate
一种SiC/MoSi2载样板的制备方法
JUNG HAN (author) / XIANG YUBO (author) / MA ZHAOYANG (author) / WU JIGUANG (author) / CAO HUIYAN (author) / WAN LONGGANG (author) / WANG WENWU (author) / LI JIE (author) / WANG JIANDONG (author) / HUANG YIFEI (author)
2023-07-28
Patent
Electronic Resource
Chinese
MoSi2 oxidation resistance coatings for Mo5Si3/MoSi2 composites
British Library Online Contents | 2009
|Creep behavior of MoSi2 and MoSi2 + SiC composite
British Library Online Contents | 2004
|Fabrication and characterization of TiCw/MoSi2 and SiCw/MoSi2 composites
British Library Online Contents | 2002
|Creep behaviour of MoSi2-SiC and MoSi2-HfO2
British Library Online Contents | 2001
|