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Preparation method of heavily doped ITO powder
The invention discloses a preparation method of heavily-doped ITO (indium tin oxide) powder, which comprises the following steps: step 1, preparing In and Sn salt solutions according to the mass fraction of SnO2 of 6%, co-precipitating to prepare indium tin hydroxide, and calcining to obtain ITO powder in a complete solid solution state; step 2, adding SnO2 into the ITO powder in the step 1 according to the mass fraction of 4%, and mechanically and uniformly mixing; compared with the prior art, the method has the advantages that the Sn element of the prepared powder is uniformly distributed in an In2O3 phase solid solution and particles, the solid solution and segregation phenomena in the later sintering process are avoided, the uniformity and the electrical stability of the structure components of the ITO target material can be greatly improved, meanwhile, the chemical migration process in the sintering process is shortened, and the yield of the ITO target material is improved. And the sintering time is shortened.
本发明公开了一种重掺杂ITO粉的制备方法，所述重掺杂ITO粉的制备方法包括以下步骤：步骤一、按SnO2质量分数6％配制In、Sn盐溶液，共沉淀制备氢氧化铟锡，煅烧后得到完全固溶状态的ITO粉；步骤二、按SnO2质量分数4％加入第一步的ITO粉中，机械混合均匀。与现有技术相比的优点在于：本发明制备的粉体Sn元素在In2O3相固溶及颗粒间分布均匀，避免了后期烧结过程的固溶、及偏析现象的发生，可以大幅度提高ITO靶材组织成分的均匀性及电学稳定性，同时缩短了烧结过程中的化学迁移过程，降低了了烧结时间。
Preparation method of heavily doped ITO powder
The invention discloses a preparation method of heavily-doped ITO (indium tin oxide) powder, which comprises the following steps: step 1, preparing In and Sn salt solutions according to the mass fraction of SnO2 of 6%, co-precipitating to prepare indium tin hydroxide, and calcining to obtain ITO powder in a complete solid solution state; step 2, adding SnO2 into the ITO powder in the step 1 according to the mass fraction of 4%, and mechanically and uniformly mixing; compared with the prior art, the method has the advantages that the Sn element of the prepared powder is uniformly distributed in an In2O3 phase solid solution and particles, the solid solution and segregation phenomena in the later sintering process are avoided, the uniformity and the electrical stability of the structure components of the ITO target material can be greatly improved, meanwhile, the chemical migration process in the sintering process is shortened, and the yield of the ITO target material is improved. And the sintering time is shortened.
本发明公开了一种重掺杂ITO粉的制备方法，所述重掺杂ITO粉的制备方法包括以下步骤：步骤一、按SnO2质量分数6％配制In、Sn盐溶液，共沉淀制备氢氧化铟锡，煅烧后得到完全固溶状态的ITO粉；步骤二、按SnO2质量分数4％加入第一步的ITO粉中，机械混合均匀。与现有技术相比的优点在于：本发明制备的粉体Sn元素在In2O3相固溶及颗粒间分布均匀，避免了后期烧结过程的固溶、及偏析现象的发生，可以大幅度提高ITO靶材组织成分的均匀性及电学稳定性，同时缩短了烧结过程中的化学迁移过程，降低了了烧结时间。
Preparation method of heavily doped ITO powder
一种重掺杂ITO粉的制备方法
LIU HONGFU (author) / YANG JIANXIN (author) / LIU ZHIJIANG (author) / WANG HAO (author)
2023-08-22
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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