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Bismuth layered structure piezoelectric ceramic material as well as preparation method and application thereof
The invention discloses a bismuth layered structure piezoelectric ceramic material as well as a preparation method and application thereof, and relates to the field of an electric ceramic material, the bismuth layered structure piezoelectric ceramic material is represented by a stoichiometric general formula CaBi4Ti4-x (Nb2/3Mn1/3) xO15. According to the method, Ti ions in CBT ceramic lattices are replaced with Nb ions and Mn ions, ion doping of the B site is successfully achieved, the Nb ions serve as a donor type doping agent, extra electrons are provided, the carrier concentration is changed, ferroelectric performance is adjusted, oxygen vacancies generated by doping of the Mn ions are combined with intrinsic oxygen vacancies to form under-coordination bonding defects, and the ferroelectric performance is improved. According to the method, the concentration of movable oxygen vacancies is reduced, on the basis of the principle, the molar ratio relation of Nb ions, Mn ions and Ti ions in the piezoelectric ceramic material is limited, the insulativity of CBT ceramic is improved, and generation of high-temperature leakage current is restrained.
本发明公开了一种铋层状结构压电陶瓷材料及其制备方法和应用，涉及一种电陶瓷材料领域，一种铋层状结构压电陶瓷材料，该压电陶瓷材料由化学计量通式CaBi4Ti4‑x(Nb2/3Mn1/3)xO15表示。本发明利用Nb离子和Mn离子取代CBT陶瓷晶格中Ti离子的方式，成功地实现了B位的离子掺杂，Nb离子作为施主型掺杂剂，提供额外的电子，改变了载流子浓度，调节了铁电性能，Mn离子掺入产生的氧空位与本征氧空位结合成欠配位键合缺陷，减小了可移动氧空位的浓度，在上述原理的基础上，限制了压电陶瓷材料中Nb离子、Mn离子和Ti离子的摩尔比关系，提高了CBT陶瓷的绝缘性，抑制了高温漏电流的产生。
Bismuth layered structure piezoelectric ceramic material as well as preparation method and application thereof
The invention discloses a bismuth layered structure piezoelectric ceramic material as well as a preparation method and application thereof, and relates to the field of an electric ceramic material, the bismuth layered structure piezoelectric ceramic material is represented by a stoichiometric general formula CaBi4Ti4-x (Nb2/3Mn1/3) xO15. According to the method, Ti ions in CBT ceramic lattices are replaced with Nb ions and Mn ions, ion doping of the B site is successfully achieved, the Nb ions serve as a donor type doping agent, extra electrons are provided, the carrier concentration is changed, ferroelectric performance is adjusted, oxygen vacancies generated by doping of the Mn ions are combined with intrinsic oxygen vacancies to form under-coordination bonding defects, and the ferroelectric performance is improved. According to the method, the concentration of movable oxygen vacancies is reduced, on the basis of the principle, the molar ratio relation of Nb ions, Mn ions and Ti ions in the piezoelectric ceramic material is limited, the insulativity of CBT ceramic is improved, and generation of high-temperature leakage current is restrained.
本发明公开了一种铋层状结构压电陶瓷材料及其制备方法和应用，涉及一种电陶瓷材料领域，一种铋层状结构压电陶瓷材料，该压电陶瓷材料由化学计量通式CaBi4Ti4‑x(Nb2/3Mn1/3)xO15表示。本发明利用Nb离子和Mn离子取代CBT陶瓷晶格中Ti离子的方式，成功地实现了B位的离子掺杂，Nb离子作为施主型掺杂剂，提供额外的电子，改变了载流子浓度，调节了铁电性能，Mn离子掺入产生的氧空位与本征氧空位结合成欠配位键合缺陷，减小了可移动氧空位的浓度，在上述原理的基础上，限制了压电陶瓷材料中Nb离子、Mn离子和Ti离子的摩尔比关系，提高了CBT陶瓷的绝缘性，抑制了高温漏电流的产生。
Bismuth layered structure piezoelectric ceramic material as well as preparation method and application thereof
一种铋层状结构压电陶瓷材料及其制备方法和应用
XU JIAGENG (author) / XIE SHAOXIONG (author) / WANG QINGYUAN (author)
2023-09-15
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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