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Preparation method of silicon nitride ceramic substrate with high toughness, high strength and high thermal conductivity
The invention discloses a preparation method of a silicon nitride ceramic substrate with high toughness, high strength and high thermal conductivity, and belongs to the technical field of inorganic non-metallic materials. The silicon nitride ceramic substrate with high toughness, high strength and high thermal conductivity is prepared by taking alpha-Si3N4 as a raw material, beta-Si3N4 as a seed crystal, a metal silicide as a toughening agent and a metal oxide and/or a metal non-oxide as a sintering aid in combination with a tape casting process and an air pressure sintering technology. The bending strength of the silicon nitride ceramic substrate prepared by the method is not lower than 800MPa, the fracture toughness is not lower than 8.0 MPa.m < 1/2 >, and the heat conductivity is not lower than 90W/(m.K).
本发明公开了一种高韧性高强度高导热的氮化硅陶瓷基板的制备方法，属于无机非金属材料技术领域。所述氮化硅陶瓷基板以α‑Si3N4为原料，以β‑Si3N4为晶种，以金属硅化物为增韧剂，以金属氧化物和/或金属非氧化物为烧结助剂，结合流延成型工艺以及气压烧结技术制备得到高韧性高强度高导热的氮化硅陶瓷基板。利用本发明方法制备的氮化硅陶瓷基板的抗弯强度不低于800MPa，断裂韧性不低于8.0MPa·m1/2，热导率不低于90W/(m·K)。
Preparation method of silicon nitride ceramic substrate with high toughness, high strength and high thermal conductivity
The invention discloses a preparation method of a silicon nitride ceramic substrate with high toughness, high strength and high thermal conductivity, and belongs to the technical field of inorganic non-metallic materials. The silicon nitride ceramic substrate with high toughness, high strength and high thermal conductivity is prepared by taking alpha-Si3N4 as a raw material, beta-Si3N4 as a seed crystal, a metal silicide as a toughening agent and a metal oxide and/or a metal non-oxide as a sintering aid in combination with a tape casting process and an air pressure sintering technology. The bending strength of the silicon nitride ceramic substrate prepared by the method is not lower than 800MPa, the fracture toughness is not lower than 8.0 MPa.m < 1/2 >, and the heat conductivity is not lower than 90W/(m.K).
本发明公开了一种高韧性高强度高导热的氮化硅陶瓷基板的制备方法，属于无机非金属材料技术领域。所述氮化硅陶瓷基板以α‑Si3N4为原料，以β‑Si3N4为晶种，以金属硅化物为增韧剂，以金属氧化物和/或金属非氧化物为烧结助剂，结合流延成型工艺以及气压烧结技术制备得到高韧性高强度高导热的氮化硅陶瓷基板。利用本发明方法制备的氮化硅陶瓷基板的抗弯强度不低于800MPa，断裂韧性不低于8.0MPa·m1/2，热导率不低于90W/(m·K)。
Preparation method of silicon nitride ceramic substrate with high toughness, high strength and high thermal conductivity
一种高韧性高强度高导热的氮化硅陶瓷基板的制备方法
HAN KUO (author) / CHEN XINQIAO (author) / LIANG PENGJIE (author)
2023-09-19
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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