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The invention discloses a preparation method and application of a molybdenum trioxide nanosheet semiconductor. The preparation method comprises the following steps: adding alpha-MoO3 and powdered sulfur into an organic solvent, uniformly mixing, reacting at 120-150 DEG C for 20-24 hours, centrifuging, taking supernatant liquid, keeping in a dark place to obtain a MoO3QDs solution, and drying to obtain vulcanized MoO3-xQDs powder; the preparation method comprises the following steps: dispersing MoO < 3-x > QDs powder in water to prepare slurry, coating a substrate with the slurry, and heating at 300-350 DEG C for 1-2 hours to obtain a semiconductor molybdenum trioxide nanosheet; the mass ratio of the alpha-MoO3 to the powdered sulfur is 1: (0.5-2). According to the method, the sulfur powder is added for doping in the preparation process, the molybdenum trioxide nanosheets with different morphologies and performance characteristics can be prepared by simply adjusting the amount of the sulfur powder, operation is easy and convenient, higher flexibility and practicability are achieved, and a new scheme and approach are provided for preparing the molybdenum trioxide nanosheets with different morphologies and performance.
本申请公开了一种三氧化钼纳米片半导体的制备方法及其应用。本申请制备方法包括，将α‑MoO3和硫粉加入有机溶剂中混匀，在120‑150℃反应20‑24h，离心取上层清液避光保存得MoO3QDs溶液，干燥，得硫化MoO3‑xQDs粉末；将MoO3‑xQDs粉末分散水中，制成浆料，涂覆于基板上，300‑350℃加热1‑2h，获得半导体三氧化钼纳米片；α‑MoO3和硫粉质量比为1:0.5‑2。本申请方法，在制备过程中添加硫粉进行掺杂，通过简单的调节硫粉量即可制备获得不同形貌和性能特性的三氧化钼纳米片，操作简单方便，具有更强的灵活性和实用性，为制备不同形貌和性能三氧化钼纳米片提供了一种新的方案和途径。
The invention discloses a preparation method and application of a molybdenum trioxide nanosheet semiconductor. The preparation method comprises the following steps: adding alpha-MoO3 and powdered sulfur into an organic solvent, uniformly mixing, reacting at 120-150 DEG C for 20-24 hours, centrifuging, taking supernatant liquid, keeping in a dark place to obtain a MoO3QDs solution, and drying to obtain vulcanized MoO3-xQDs powder; the preparation method comprises the following steps: dispersing MoO < 3-x > QDs powder in water to prepare slurry, coating a substrate with the slurry, and heating at 300-350 DEG C for 1-2 hours to obtain a semiconductor molybdenum trioxide nanosheet; the mass ratio of the alpha-MoO3 to the powdered sulfur is 1: (0.5-2). According to the method, the sulfur powder is added for doping in the preparation process, the molybdenum trioxide nanosheets with different morphologies and performance characteristics can be prepared by simply adjusting the amount of the sulfur powder, operation is easy and convenient, higher flexibility and practicability are achieved, and a new scheme and approach are provided for preparing the molybdenum trioxide nanosheets with different morphologies and performance.
本申请公开了一种三氧化钼纳米片半导体的制备方法及其应用。本申请制备方法包括，将α‑MoO3和硫粉加入有机溶剂中混匀，在120‑150℃反应20‑24h，离心取上层清液避光保存得MoO3QDs溶液，干燥，得硫化MoO3‑xQDs粉末；将MoO3‑xQDs粉末分散水中，制成浆料，涂覆于基板上，300‑350℃加热1‑2h，获得半导体三氧化钼纳米片；α‑MoO3和硫粉质量比为1:0.5‑2。本申请方法，在制备过程中添加硫粉进行掺杂，通过简单的调节硫粉量即可制备获得不同形貌和性能特性的三氧化钼纳米片，操作简单方便，具有更强的灵活性和实用性，为制备不同形貌和性能三氧化钼纳米片提供了一种新的方案和途径。
Preparation method and application of molybdenum trioxide nanosheet semiconductor
一种三氧化钼纳米片半导体的制备方法及其应用
2023-10-13
Patent
Electronic Resource
Chinese
IPC:
C01G
Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle
,
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
/
B82Y
Bestimmter Gebrauch oder bestimmte Anwendung von Nanostrukturen
,
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
/
C04B
Kalk
,
LIME
/
G01N
Untersuchen oder Analysieren von Stoffen durch Bestimmen ihrer chemischen oder physikalischen Eigenschaften
,
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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