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Rare earth scandium nano layered carbide Sc2AC (A= Al, Ga, In) ceramic and preparation method thereof
The invention discloses rare earth scandium nano layered carbide Sc2AC (A = Al, Ga, In) ceramic and a preparation method thereof. The chemical formula of the ceramic is Sc2AlC, Sc2GaC or Sc2InC, and the space group is P63/mmc; the preparation method specifically comprises the following steps: mixing Sc powder, In/Al/Ga powder and C powder according to a molar ratio of 2: (0.9-1.2): 1 under the protection of argon to obtain mixed powder; and loading the mixed powder into a self-designed special graphite crucible, loading the graphite crucible into a discharge plasma sintering furnace, heating to 1100-1300 DEG C according to a certain program, cooling, and grinding off a surface carbonization layer to obtain a sample. According to the invention, the problem that whether the three compounds exist or not puzzles the science for more than ten years is solved, and a solid foundation is laid for subsequent research; the scandium-containing layered compound synthesized by the method is a potential precursor of a two-dimensional material Sc2CTx, and the Sc2CTx is predicted to be a two-dimensional semiconductor material and has extremely high research and commercial application values.
本发明公开了一种稀土钪纳米层状碳化物Sc2AC(A=Al,Ga,In)陶瓷及其制备方法,陶瓷的化学式为Sc2AlC、Sc2GaC或Sc2InC,空间群为P63/mmc;制备方法具体为:将Sc粉、In/Al/Ga和C粉按2:(0.9~1.2):1的摩尔比在氩气保护下混合,得混合粉体;将混合粉体装载至自有设计的特制石墨坩埚后装载到放电等离子体烧结炉中,按照一定程序升温至1100~1300℃,其后冷却、磨去表面碳化层,即得样品。本发明解决了困扰学界十几年来这三种化合物是否存在的问题,对后续的研究奠定了坚实的基础;本发明合成的含钪层状化合物均是潜在的二维材料Sc2CTx的前驱体,而Sc2CTx被预测为一种二维半导体材料,有极高的研究和商业应用价值。
Rare earth scandium nano layered carbide Sc2AC (A= Al, Ga, In) ceramic and preparation method thereof
The invention discloses rare earth scandium nano layered carbide Sc2AC (A = Al, Ga, In) ceramic and a preparation method thereof. The chemical formula of the ceramic is Sc2AlC, Sc2GaC or Sc2InC, and the space group is P63/mmc; the preparation method specifically comprises the following steps: mixing Sc powder, In/Al/Ga powder and C powder according to a molar ratio of 2: (0.9-1.2): 1 under the protection of argon to obtain mixed powder; and loading the mixed powder into a self-designed special graphite crucible, loading the graphite crucible into a discharge plasma sintering furnace, heating to 1100-1300 DEG C according to a certain program, cooling, and grinding off a surface carbonization layer to obtain a sample. According to the invention, the problem that whether the three compounds exist or not puzzles the science for more than ten years is solved, and a solid foundation is laid for subsequent research; the scandium-containing layered compound synthesized by the method is a potential precursor of a two-dimensional material Sc2CTx, and the Sc2CTx is predicted to be a two-dimensional semiconductor material and has extremely high research and commercial application values.
本发明公开了一种稀土钪纳米层状碳化物Sc2AC(A=Al,Ga,In)陶瓷及其制备方法,陶瓷的化学式为Sc2AlC、Sc2GaC或Sc2InC,空间群为P63/mmc;制备方法具体为:将Sc粉、In/Al/Ga和C粉按2:(0.9~1.2):1的摩尔比在氩气保护下混合,得混合粉体;将混合粉体装载至自有设计的特制石墨坩埚后装载到放电等离子体烧结炉中,按照一定程序升温至1100~1300℃,其后冷却、磨去表面碳化层,即得样品。本发明解决了困扰学界十几年来这三种化合物是否存在的问题,对后续的研究奠定了坚实的基础;本发明合成的含钪层状化合物均是潜在的二维材料Sc2CTx的前驱体,而Sc2CTx被预测为一种二维半导体材料,有极高的研究和商业应用价值。
Rare earth scandium nano layered carbide Sc2AC (A= Al, Ga, In) ceramic and preparation method thereof
一种稀土钪纳米层状碳化物Sc2AC(A=Al,Ga,In)陶瓷及其制备方法
HU CHUNFENG (author) / ZHANG QIQIANG (author) / LUO JIA (author) / WEN BO (author) / FENG QINGGUO (author)
2023-11-10
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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